While layered materials are increasingly investigated for their potential in nanoelectronics, their functionality and efficiency depend on charge injection into the materials via metallic contacts. This work explores the characteristics of different metals (aluminium, tungsten, gold and platinum) deposited on to nanostructured thin films made of two-dimensional (2D) MoS 2 flakes. Metals are chosen based on their work functions relative to the electron affinity of MoS 2. It is observed, and analytically verified, that lower work functions of the contact metals lead to smaller Schottky barrier heights and consequently higher charge carrier injection through the contacts.
In this paper, we present H 2 gas sensors based on hollow and filled, wellaligned electrospun SnO 2 nanofibers, operating at a low temperature of 150 °C. SnO 2 nanofibers with diameters ranging from 80 to 400 nm have been successfully synthesized in which the diameter of the nanofibers can be controlled by adjusting the concentration of polyacrylonitrile in the solution for electrospinning. The presence of this polymer results in the formation of granular walls for the nanofibers. We discussed the correlation between nanofibers morphology, structure, oxygen vacancy contents and the gas sensing performances. X-ray photoelectron spectroscopy analysis revealed that the granular hollow SnO 2 nanofibers, which show the highest responses, contain a significant number of oxygen vacancies, which are favorable for gas sensor operating at low temperatures.
We report the influence of zinc oxide (ZnO) seed layers on the performance of ZnO-based memristive devices fabricated using an electrodeposition approach. The memristive element is based on a sandwich structure using Ag and Pt electrodes. The ZnO seed layer is employed to tune the morphology of the electrodeposited ZnO films in order to increase the grain boundary density as well as construct highly ordered arrangements of grain boundaries. Additionally, the seed layer also assists in optimizing the concentration of oxygen vacancies in the films. The fabricated devices exhibit memristive switching behaviour with symmetrical and asymmetrical hysteresis loops in the absence and presence of ZnO seed layers, respectively. A modest concentration of oxygen vacancy in electrodeposited ZnO films as well as an increase in the ordered arrangement of grain boundaries leads to higher switching ratios in Ag/ZnO/Pt devices.
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