Engineering electrodeposited ZnO films and their memristive switching performance

Zoolfakar, Ahmad Sabirin; Kadir, Rosmalini Ab; Rani, Rozina Abdul; Balendhran, Sivacarendran; Liu, Xinjun; Kats, Eugene; Bhargava, Suresh K.; Bhaskaran, Madhu; Sriram, Sharath; Zhuiykov, Serge; O’Mullane, Anthony P.; Kalantar‐zadeh, Kourosh

doi:10.1039/c3cp44451a

Cited by 55 publications

(40 citation statements)

References 55 publications

(64 reference statements)

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“…Therefore, set and reset voltages in ECM are lower than that in VCM. Nevertheless, it is reported that a high electronegativity of Au may also behave as active metals [ 108 ]; in addition, the omission of Ni or Ag atoms diffusion in CF formation is also reported [ 166 , 167 ]; this phenomena may relate to different ZnO film quality, device geometry, and operation method. The major device parameters as a function of different metal electrodes are summarized in Table 1 .…”

Section: Reviewmentioning

confidence: 99%

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

et al. 2016

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In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.

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Section: Reviewmentioning

confidence: 99%

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

et al. 2016

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“…Since then, the fabrication and study of memristive devices have become very popular due to their applications in information storage, non-volatile memories, neural networks, etc. [3-5] Memristive switching behavior has been observed in many metal oxides [6,7] and attributed to the migration of oxygen vacancies within the oxide layers and grain boundaries [8,9], but still, transport mechanisms are being studied and different models have been suggested [7-9]. Zinc oxide (ZnO) possesses several interesting properties and has been extensively studied for its technological applications, specifically in electronic and optoelectronic devices such as photodetectors [10,11], light-emitting diodes [12], solar cells [13,14], and gas sensing [15].…”

Section: Introductionmentioning

confidence: 99%

ZnO-porous silicon nanocomposite for possible memristive device fabrication

et al. 2014

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Preliminary results on the fabrication of a memristive device made of zinc oxide (ZnO) over a mesoporous silicon substrate have been reported. Porous silicon (PS) substrate is employed as a template to increase the formation of oxygen vacancies in the ZnO layer and promote suitable grain size conditions for memristance. Morphological and optical properties are investigated using scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. The proposed device exhibits a zero-crossing pinched hysteresis current-voltage (I-V) curve characteristic of memristive systems.

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“…A seed layer is therefore essential in order to achieve well aligned nanorods on the substrate. Recently, several seed coating techniques have been used for the growth of well-ordered ZnO nanorods, such as atomic layer deposition (ALD), pulsed laser deposition (PLD) [18], electron beam evaporation (EBE) [19], the successive ionic layer adsorption and reaction (SILAR) method [20], spray pyrolysis [21], and RF sputtering techniques [22,23]. The growth of ZnO nanorods, homogeneously perpendicular to the substrate, is a challenging task using a simple and low temperature aqueous chemical growth method.…”

Section: Introductionmentioning

confidence: 99%

Hydrothermal Growth of Vertically Aligned ZnO Nanorods Using a Biocomposite Seed Layer of ZnO Nanoparticles

et al. 2013

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Well aligned ZnO nanorods have been prepared by a low temperature aqueous chemical growth method, using a biocomposite seed layer of ZnO nanoparticles prepared in starch and cellulose bio polymers. The effect of different concentrations of biocomposite seed layer on the alignment of ZnO nanorods has been investigated. ZnO nanorods grown on a gold-coated glass substrate have been characterized by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) techniques. These techniques have shown that the ZnO nanorods are well aligned and perpendicular to the substrate, and grown with a high density and uniformity on the substrate. Moreover, ZnO nanorods can be grown with an orientation along the c-axis of the substrate and exhibit a wurtzite crystal structure with a dominant (002) peak in an XRD spectrum and possessed a high crystal quality. A photoluminescence (PL) spectroscopy study of the ZnO nanorods has revealed a conventional near band edge ultraviolet emission, along with emission in the visible part of the electromagnetic spectrum due to defect emission. This study provides an alternative method for the fabrication of well aligned ZnO nanorods. This method can be helpful in improving the performance of devices where alignment plays a significant role.

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Engineering electrodeposited ZnO films and their memristive switching performance

Cited by 55 publications

References 55 publications

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

ZnO-porous silicon nanocomposite for possible memristive device fabrication

Hydrothermal Growth of Vertically Aligned ZnO Nanorods Using a Biocomposite Seed Layer of ZnO Nanoparticles

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