A systematic study of the e-3 acceptor-related photoluminescence spectra in GaAs-(Ga, Al)As quantum wells under applied electric field is presented. The approach we adopt is based on the effective-mass approximation and a variational procedure for determining the acceptor energy and envelope wave function. The impurity-related photoluminescence line shape depends on the strength of the longitudinally applied electric field, the temperature, the quasi-Fermi energy of the conduction-subband electron gas, and on the acceptor distribution along the quantum well. We find that the spectrum line shapes are essentially characterized by the presence of three features, namely, one peaked structure associated with transitions involving acceptors with binding energies at the top of the impurity band and two van Hovelike structures related to acceptors at the two edges of the quantum well.
We show that, in the framework of the effective-mass approximation, an electron confined in a finite parabolic quantum well under crossed electric and magnetic fields can behave as a double-quantum-well system. These homogeneous crossed fields are such that the magnetic field is parallel to the heterostructure layers and the electric field is applied perpendicular to the magnetic field. For a suitable choice of both fields, the electron is confined to a doublequantum-well effective potential.
The effects of an applied electric field on the properties of shallow-donor states in GaAs-(Ga,Al)As quantum wells (QWs) have been discussed in a number of recent papers /1 to 3 / . Brum et al. /1/ were the first to calculate the donor binding
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