On the Shallow‐Donor States in GaAs‐(Ga, Al) As Quantum Wells under Applied Electric Field

Santiago, Rosana B.; Oliveira, L. E.; Castro, J. d'Albuquerque e

doi:10.1002/pssb.2221690133

Physica Status Solidi (b)

1992

DOI: 10.1002/pssb.2221690133

|View full text |Cite

On the Shallow‐Donor States in GaAs‐(Ga, Al) As Quantum Wells under Applied Electric Field

Rosana B. Santiago

L. E. Oliveira

J. d'Albuquerque e Castro

Abstract: The effects of an applied electric field on the properties of shallow-donor states in GaAs-(Ga,Al)As quantum wells (QWs) have been discussed in a number of recent papers /1 to 3 / . Brum et al. /1/ were the first to calculate the donor binding

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1993

2004

Publication Types

Select...

Article3

Relationship

Self Cite0

Independent3

Authors

Journals

Cited by 3 publications

(1 citation statement)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…There is a number of theoretical papers dealing with the magnetic-field effect on doped heterostuctures, e.g., [2][3][4]. The theoretical study of the influence of the electric field alone on the donor levels in quantum wells (QW) has been presented in the papers [5,6]. Yoo et al [7] have performed a far-infrared magnetoabsorption experiment to investigate the influence Of both the electric and magnetic fields on the donor states in the GaΑs/Ga1-xAlx Αs QW structure.…”

mentioning

confidence: 99%

Effect of Electric and Magnetic Fields on Donor States in Semiconductor Quantum Wells

Rolnik

Adamowski

1996

Acta Phys. Pol. A

View full text Add to dashboard Cite

An influence of static external electric and magnetic fields on donor states in a quantum well is studied by variational means. The energies of the s and 2p± hydrogenic states were calculated for different structure parameters (well depth and width) and different fields applied. The calculated s-2p± transition energies agree well with experimental data.PACS numbers: 73.20. Dx, 73.20.Hb An application of the static external electromagnetic fields to doped heterostuctures changes the structure of the donor levels in a rather wide range of energy. The application of the magnetic field is of cucial importance in experiments on donors because it lifts the degeneracy of donor states; therefore, the transition energies can be easily measured [1]. There is a number of theoretical papers dealing with the magnetic-field effect on doped heterostuctures, e.g., [2][3][4]. The theoretical study of the influence of the electric field alone on the donor levels in quantum wells (QW) has been presented in the papers [5,6]. Yoo et al. [7] have performed a far-infrared magnetoabsorption experiment to investigate the influence Of both the electric and magnetic fields on the donor states in the GaΑs/Ga1-xAlx Αs QW structure. A theoretical description of the experimental results [7] has been proposed by Latge et al. [8], who applied the single exponential-type trial function. However, the comparison with the experiment [7] does not look satisfactorily, especially for large magnetic fields. In the present paper we have proposed the trial wave function in the form of linear combination of Gaussians. For comparison, we have also performed the calculations using the single exponential-type trial wave function.We consider a hydrogenic model of a donor impurity located in a quantum well of depth VB and thickness L. The electric and magnetic fields are applied along the growth axis (z axis). The donor ionization by the electric field is neglected. In the donor units, i.e. the donor Bohr radius as a unit of length and the donor (915)

show abstract

mentioning

confidence: 99%

Effect of Electric and Magnetic Fields on Donor States in Semiconductor Quantum Wells

Rolnik

Adamowski

1996

Acta Phys. Pol. A

View full text Add to dashboard Cite

show abstract

Stark effects on Coulomb-bound states in GaAs–(Ga,Al)As quantum wells: virial theorem and scaling properties

Reyes‐Gómez¹,

Villalba-Chávez²,

Oliveira³

et al. 2004

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

The effects of applied electric fields on donor and exciton states confined in GaAs-(Ga,Al)As quantum wells are studied in the effective mass approximation and within the variational and fractional-dimensional space approaches. In the fractional-dimensional scheme, an effective isotropic medium is used to model the anisotropic Coulomb-bound state + quantum well + electric-field system, whereas a hydrogenic-like wave function is used in the variational procedure. Results are obtained for the binding energies, virial-theorem values, and scaling properties of the Coulomb-bound states under growth-direction applied electric fields. We show that a ground-state wave function assumed as a D-dimensional hydrogenic wave function leads to a virial-theorem value of 2 and a hyperbolic scaling for binding energies of Coulomb-bound states versus quantum-confined Bohr radii, in contrast with results using the variational approach. Both methods result in Stark shifts for the exciton-peak energies in good agreement with electroabsorption experiments.

show abstract

Binding energy of a bound polaron in strong magnetic fields in low-dimensional semiconductor systems

Elangovan

Navaneethakrishnan

1993

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

Ionization energies of a shallow donor in a quantum well (Q2D), quantum well wire (Q1D) and quantum box (Q0D) of the GaAs/Ga1-xAlxAs superlattice system in strong magnetic fields are obtained. The contributions from the electron-lattice coupling are also systematically investigated in all these systems. It is found that the ionization energy (Eion) (i) decreases with an increase in well width in Q2D, Q1D, and Q0D systems; (ii) increases with magnetic field for a given well width in all these systems, and (iii) increases as the spatial dimension is reduced for a given well width and magnetic field. The polaronic effect on Eion, that is, Delta Ee-1(B)/Eion( alpha =0,B) decreases when the magnetic field is increased in all three systems, showing a softening of the electron-lattice coupling. This decrease is more pronounced in Q2D than in Q1D or Q0D. The polaronic shift is also seen to be more important for systems with a smaller well width. The results are discussed in the light of the existing literature on these systems wherever available.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

On the Shallow‐Donor States in GaAs‐(Ga, Al) As Quantum Wells under Applied Electric Field

Abstract: The effects of an applied electric field on the properties of shallow-donor states in GaAs-(Ga,Al)As quantum wells (QWs) have been discussed in a number of recent papers /1 to 3 / . Brum et al. /1/ were the first to calculate the donor binding

Cited by 3 publications

References 8 publications

Effect of Electric and Magnetic Fields on Donor States in Semiconductor Quantum Wells

Effect of Electric and Magnetic Fields on Donor States in Semiconductor Quantum Wells

Stark effects on Coulomb-bound states in GaAs–(Ga,Al)As quantum wells: virial theorem and scaling properties

Binding energy of a bound polaron in strong magnetic fields in low-dimensional semiconductor systems

Contact Info

Product

Resources

About