Photoluminescence line shape associated withe-A0acceptor-related recombination in GaAs-(Ga,Al)As quantum wells under applied electric field

Abstract

A systematic study of the e-3 acceptor-related photoluminescence spectra in GaAs-(Ga, Al)As quantum wells under applied electric field is presented. The approach we adopt is based on the effective-mass approximation and a variational procedure for determining the acceptor energy and envelope wave function. The impurity-related photoluminescence line shape depends on the strength of the longitudinally applied electric field, the temperature, the quasi-Fermi energy of the conduction-subband electron gas, and on the acceptor distribution along the quantum well. We find that the spectrum line shapes are essentially characterized by the presence of three features, namely, one peaked structure associated with transitions involving acceptors with binding energies at the top of the impurity band and two van Hovelike structures related to acceptors at the two edges of the quantum well.

Dislocations Preferentially Generated in Compressed Regions of Saddle-Shaped Deformed, Precipitation-Softened, Czochralski-Grown Silicon Wafers

“…In the above discussion, we consider only the absorption spectra for the transition from the first valence subband to the donor level. The photoluminescence lineshape associated with donors in quantum wells is the same as that of absorption spectra [4,5]. The peaks of photoluminescence spectra that can be observed in the doped quantum wells are exciton peaks and the peak associated with the transition from donor level to the first valence subband [8].…”

“…The transition probability per unit time for transition from the first valence subband to donor level associated with the impurity located at the position (0, 0, z 0 ) is proportional to the square of the matrix element of the electron-photon interaction H int between the wavefunctions of the initial state (valence) and final (impurity) state [4,5] …”

“…with H int = Ce · p, where e is the polarization vector in the direction of the electric field of the radiation, p is the momentum operator and C is a pre-factor that describes the effects of the photon vector potential [4,5]. The above matrix element may be written [4,5] f |H int |i…”

“…Progress in this area has been made possible due to the development of sophisticated material growth techniques. The impurity states in these structures have been studied widely in both theoretical and experimental respects [1][2][3][4][5][6][7][8][9][10]. A quantum well can be called a dielectric quantum well when the dielectric constant of the barrier material is significantly smaller than that of the well material [11,12], e.g.…”

<title>Photoluminescence kinetics of type II GaAs/AlAs superlattices under the influence of an electric field</title>

“…4. PL kinetics offree excitonic line under the application localized(3,4) excitons and phonon replicas (5,6) without(1 , ofSAW. The SAW electric field strength is equal to (1) 3, (2) 3, 5, shown in black) and under (2, 4, 6) the influence of 6, (3) 9 and (4) 12 kV/cm.…”