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Silicon Rich Oxide (SRO) has been considered as a material to overcome the drawbacks of silicon to achieve optical functions. Various techniques can be used to produce it, including Low-Pressure Chemical Vapor Deposition (LPCVD). In this paper, a brief description of the studies carried out and discussions of the results obtained on electro-, cathode-, and photoluminescence properties of SRO prepared by LPCVD and annealed at 1,100°Care presented. The experimental results lead us to accept that SRO emission properties are due to oxidation state nanoagglomerates rather than to nanocrystals. The emission mechanism is similar to Donor-Acceptor decay in semiconductors, and a wide emission spectrum, from 450 to 850 nm, has been observed. The results show that emission is a function of both silicon excess in the film and excitation energy. As a result different color emissions can be obtained by selecting the suitable excitation energy.

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nm3.5 nm Abstract:In this paper, the effect of the gate, channel, and substrate resistances on the MOSFET's input and output ports has been investigated when the CMOS technology is scaled from the 0.18,um to the sub-100 nm regime by analyzing S-parameter measurements. Results showed new features to be considered in the modeling of the input port of sub-I00 nm devices, while the output port remains almost insensitive to technology scaling. Additionally, an enhanced model for the gate electrode impedance and a novel substrate resistance extraction technique are proposed to study the device's characteristics at RF.