A review of DC extraction methods for MOSFET series resistance and mobility degradation model parameters

Ortíz‐Conde, A.; Sucre-González, Andrea; Zarate-Rincon, Fabian; Torres‐Torres, Reydezel; Murphy‐Arteaga, Roberto S.; Liou, Juin J.; Sánchez, F.J. Garcı́a

doi:10.1016/j.microrel.2016.12.016

Cited by 44 publications

(12 citation statements)

References 67 publications

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“…2 (c), the series resistance contributes significantly or even dominates in the extrinsic drain resistance in the studied ranges of the extrinsic gate and drain voltages. Therefore, for correct analysis of the charge carrier transport, we introduce intrinsic gate and drain voltages, (V gs ) and (V ds ) respectively, calculated as [26] V…”

Section: Resultsmentioning

confidence: 99%

Low-Field Mobility and High-Field Velocity of Charge Carriers in InGaAs/InP High-Electron-Mobility Transistors

Rodrigues

Vorobiev

2022

IEEE Trans. Electron Devices

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Development of transistors for advanced low noise amplifiers requires better understanding of mechanisms governing the charge carrier transport in correlation with the noise performance. In this paper, we report on study of the carrier velocity in InGaAs/InP high-electron-mobility transistors (HEMTs) found via geometrical magnetoresistance in the wide range of the drain fields, up to 2 kV/cm, at cryogenic temperature of 2 K. We observed, for the first time experimentally, the velocity peaks and found that the peak velocity and corresponding field decrease significantly with the transverse field. The low-field mobility and peak velocity are found to be up to 65000 cm 2 /Vs and 1.2×10 6 cm/s, respectively. Extrapolations to the lower transverse fields show that the peak velocity can be as high as 2.7×10 7 cm/s. The corresponding intrinsic transit frequency can be up to 172 GHz at the gate length of 250 nm. We demonstrated, for the first time, that the low-field mobility and peak velocity reveal opposite dependencies on the transverse field, indicating the difference in carrier transport mechanisms dominating at low-and high-fields. Therefore, the peak velocity is an appropriate parameter for characterization and development of the low noise HEMTs, complementary to the low-field mobility. Analysis indicates that the low-field carrier transport is governed by screening of the Coulomb potential of ionized impurities responsible for the carrier scattering. The velocity overshoot is associated with the electron quantization and subband formation caused by the transverse field. The results of the research clarify the ways of the further development of the HEMTs for advanced applications.

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Section: Resultsmentioning

confidence: 99%

Low-Field Mobility and High-Field Velocity of Charge Carriers in InGaAs/InP High-Electron-Mobility Transistors

Rodrigues

Vorobiev

2022

IEEE Trans. Electron Devices

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“…This model equation has four model parameters, k, eff, V0, and VDirac, and is similar to the well-known models used for MOSFET parameter extraction [16,17].…”

Section: Theorymentioning

confidence: 99%

Mobility Degradation and Series Resistance in Graphene Field-Effect Transistors

Jeppson

Asad

Stake

2021

IEEE Trans. Electron Devices

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Accurate device models and parameter extraction methods are of utmost importance for characterizing graphene field-effect transistors (GFETs) and for predicting their performance in circuit applications. For DC characterization, accurate extraction of mobility and series resistance is of particular concern. In this paper, we show how a first-order mobility degradation model can be used to separate information about mobility degradation and series resistance for a set of GFETs of different channel lengths. Data from a large set of top-gated GFETs based on chemical vapor deposited (CVD) graphene was analyzed to validate the proposed model and extraction procedures. For removing any uncertainties caused by observed device-to-device data variations due to the uneven quality of CVD graphene, the same methods were applied to a set of closely located bottom-gated GFETs found in literature. Those GFETs were designed for transfer length methods and fabricated on exfoliated graphene of homogenous quality. Similar mobility degradation behavior was observed for both sets of devices with the mobility being reduced to half for a voltage-induced charge carrier density of 10 13 cm -2 .

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“…1 (c), the series resistance contributes significantly or even dominates in the extrinsic drain resistance in the studied ranges of the extrinsic gate and drain voltages. Therefore, for correct analysis of the charge carrier transport, we introduce intrinsic gate and drain voltages, Vgs = V GS −I ds R 2 and V ds = V DS −I ds R, respectively [20]. Calculations using these equations show that the intrinsic gate overdrive voltage, i.e.…”

Section: Index Terms-ingaas/inp Hemt Low-field Mobility Highfield Velocity Geometrical Magnetoresistance Charge Carrier Transportmentioning

confidence: 99%

Low-field Mobility and High-field Velocity of Charge Carriers in InGaAs/InP High-electron-mobility Transistors

Rodrigues¹,

Vorobiev²

2021

Preprint

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<div>Development of transistors for advanced low noise amplifiers requires better understanding of mechanisms governing the charge carrier transport in correlation with the noise performance. In this paper, we report on study of the carrier velocity in InGaAs/InP high-electron-mobility transistors (HEMTs) found via geometrical magnetoresistance in the wide range of the drain fields, up to 2 kV/cm, at cryogenic temperature of 2 K. We observed, for the first time experimentally, the velocity peaks with peak velocity and corresponding field decreasing significantly with the transverse field. The low-field mobility and peak velocity are found to be up to 65000 cm<sup>2</sup>/Vs and 1.2x10<sup>6</sup> cm/s, respectively. Extrapolations to the lower transverse fields show that the peak velocity can be as high as 2.7x10<sup>7</sup> cm/s. The corresponding intrinsic transit frequency can be up to 172 GHz at the gate length of 250 nm. We demonstrated, for the first time, that the low-field mobility and peak velocity reveal opposite dependencies on the transverse field, indicating the difference in carrier transport mechanisms dominating at low- and high-fields. Therefore, the peak velocity is an appropriate parameter for characterization and development of the low noise HEMTs, complementary to the low-field mobility. The results of the research clarify the ways of the further development of the HEMTs for advanced applications.</div>

show abstract

A review of DC extraction methods for MOSFET series resistance and mobility degradation model parameters

Cited by 44 publications

References 67 publications

Low-Field Mobility and High-Field Velocity of Charge Carriers in InGaAs/InP High-Electron-Mobility Transistors

Low-Field Mobility and High-Field Velocity of Charge Carriers in InGaAs/InP High-Electron-Mobility Transistors

Mobility Degradation and Series Resistance in Graphene Field-Effect Transistors

Low-field Mobility and High-field Velocity of Charge Carriers in InGaAs/InP High-electron-mobility Transistors

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