The terahertz region of the electromagnetic spectrum, spanning from 100 GHz through 10 THz, is of increasing importance for a wide range of scientific, military and commercial applications. This interest is spurred by the unique properties of this spectral band and the very recent development of convenient terahertz sources and detectors. However, the terahertz band is also extremely challenging, in large part because it spans the transition from traditional electronics to photonics. This paper reviews the importance of this frequency band and summarizes the efforts of scientists and engineers to span the "terahertz technology gap." The emphasis is on solid-state circuits that use nonlinear diodes to translate the functionality of microwave technology to much higher frequencies.

We present a thin film crystal ion sliced (CIS) LiNbO phase modulator that demonstrates an unprecedented measured electro-optic (EO) response up to 500 GHz. Shallow rib waveguides are utilized for guiding a single transverse electric (TE) optical mode, and Au coplanar waveguides (CPWs) support the modulating radio frequency (RF) mode. Precise index matching between the co-propagating RF and optical modes is responsible for the device's broadband response, which is estimated to extend even beyond 500 GHz. Matching the velocities of these co-propagating RF and optical modes is realized by cladding the modulator's interaction region in a thin UV15 polymer layer, which increases the RF modal index. The fabricated modulator possesses a tightly confined optical mode, which lends itself to a strong interaction between the modulating RF field and the guided optical carrier; resulting in a measured DC half-wave voltage of 3.8 V·cm. The design, fabrication, and characterization of our broadband modulator is presented in this work.

The spectral performance of freestanding resonant metal-mesh bandpass filters operating with center frequencies ranging from 585 GHz to 2.1 THz is presented. These filters are made up of a 12-µm-thick copper film with an array of cross-shaped apertures that fill a circular area with a 50-mm diameter. The filters exhibit power transmission in the range 97-100% at their respective center frequencies and stop-band rejection in excess of 18 dB. The theoretically predicted nondiffracting properties of the meshes are experimentally verified through high-resolution beam mapping. Scalability of the filter spectra with mesh dimensions is demonstrated over a wide spectral range. Several modeling methods are considered, and results from the models are shown.

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--In this work we present a 100-MESFET oscillator which gives 21 W of CW effective radiated power (ERP) with a 16 dB directivity and a 20% dc to RF conversion effciency at 5 GHz. The oscillator is a planar grid structure periodically loaded with transistors. The grid radiates and the devices combine quasi-optically and lock to each other. The oscillator can also be quasi-optically iqjection-locked to an external signal. The planar grid structure is very simple. All of the devices share the same bias, and they can be power and frequency tuned with a mirror behind the grid or dielectric slabs in front of it. An equivalent circuit for an infinite grid predicts the mirror frequency tuning. The planar property of the oscillator offers the possibility of a wafer-scale monolithically integrated source. Thousands of active solid-state devices can potentially be integrated in a high-power source for microwave or millimeter-wave applications.