The terahertz region of the electromagnetic spectrum, spanning from 100 GHz through 10 THz, is of increasing importance for a wide range of scientific, military and commercial applications. This interest is spurred by the unique properties of this spectral band and the very recent development of convenient terahertz sources and detectors. However, the terahertz band is also extremely challenging, in large part because it spans the transition from traditional electronics to photonics. This paper reviews the importance of this frequency band and summarizes the efforts of scientists and engineers to span the "terahertz technology gap." The emphasis is on solid-state circuits that use nonlinear diodes to translate the functionality of microwave technology to much higher frequencies.

The spectral performance of freestanding resonant metal-mesh bandpass filters operating with center frequencies ranging from 585 GHz to 2.1 THz is presented. These filters are made up of a 12-µm-thick copper film with an array of cross-shaped apertures that fill a circular area with a 50-mm diameter. The filters exhibit power transmission in the range 97-100% at their respective center frequencies and stop-band rejection in excess of 18 dB. The theoretically predicted nondiffracting properties of the meshes are experimentally verified through high-resolution beam mapping. Scalability of the filter spectra with mesh dimensions is demonstrated over a wide spectral range. Several modeling methods are considered, and results from the models are shown.

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A quarter-micrometer diameter Schottky barrier mixer diode has been fabricated on n+ GaAs using electron beam lithography and reactive ion etching (RIE). The anodes were formed using a Pt/Au electroplate technique. The diode zero-bias capacitance of 0.25 fF and series resistance of about 25 Ω, measured at dc, correspond to a ‘‘figure-of-merit’’ cuttoff frequency of about 25 THz. The video responsivity at 118 μm (2540 GHz) was as high as 200 V/W, over three times higher than the best previously reported. The design, fabrication, and evaluation of this diode is described.

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