Terahertz sources and detectors

Crowe, T.W.; Porterfield, David W.; Hesler, Jeffrey L.; Bishop, W.L.; Kurtz, D.S.; Hui, K.

doi:10.1117/12.604309

Cited by 26 publications

(11 citation statements)

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“…In the case of the discrete diode chip, the diodes are flip−chip mounted into the circuit with either solder or conductive epoxy. Using advanced techno− logy elaborated recently, the diodes are integrated with many passive circuit elements (impedance matching, filters and waveguide probes) onto the same substrate [105]. By improving the mechanical arrangement and reducing loss, the planar technology is pushed well beyond 300 GHz up to several THz.…”

Section: Pyroelectric Detectormentioning

confidence: 99%

Terahertz detectors and focal plane arrays

Rogalski

Сизов

2011

Opto-Electronics Review

307

217

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Terahertz (THz) technology is one of emerging technologies that will change our life. A lot of attractive applications in security, medicine, biology, astronomy, and non-destructive materials testing have been demonstrated already. However, the realization of THz emitters and receivers is a challenge because the frequencies are too high for conventional electronics and the photon energies are too small for classical optics. As a result, THz radiation is resistant to the techniques commonly employed in these well established neighbouring bands.In the paper, issues associated with the development and exploitation of THz radiation detectors and focal plane arrays are discussed. Historical impressive progress in THz detector sensitivity in a period of more than half century is analyzed. More attention is put on the basic physical phenomena and the recent progress in both direct and heterodyne detectors. After short description of general classification of THz detectors, more details concern Schottky barrier diodes, pair braking detectors, hot electron mixers and field-effect transistor detectors, where links between THz devices and modern technologies such as micromachining are underlined. Also, the operational conditions of THz detectors and their upper performance limits are reviewed. Finally, recent advances in novel nanoelectronic materials and technologies are described. It is expected that applications of nanoscale materials and devices will open the door for further performance improvement in THz detectors.

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Section: Pyroelectric Detectormentioning

confidence: 99%

Terahertz detectors and focal plane arrays

Rogalski

Сизов

2011

Opto-Electronics Review

307

217

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“…The Schottky diode based on epitaxial electron-doped gallium arsenide (n-GaAs) is probably the most important microelectronic device for operation in the sub-millimeter waves and terahertz (THz) range. 1,2 Diode areas of the order of 1 lm 2 are needed to obtain a low junction capacitance C j $ 10 À15 F, which was classically achieved by pressing etched tungsten whiskers on GaAs chips. In the last decade, planar diodes with air-bridge lithographic anodes and high cutoff frequency f c ¼ 1/2pR s C j (R s series resistance) have been developed and are playing a prominent role in sophisticated THz spectroscopic instruments such as heterodyne mixers and frequency multiplied oscillators.…”

mentioning

confidence: 99%

“…1(a) and 1(b), in both cases, the sub-micrometric Schottky junction is achieved by contacting the GaAs surface with the extremity of a free-standing metal bridge. 1,2,11,13 To cut parasitic capacitances, deep mesa isolation was performed between anode and cathode pads, then working as the arms of a planar antenna. 2,14 The difference between the two types of devices lies only in the three-dimensional geometry of the sub-micron metal-semiconductor junction, which actually allowed us to tune the Schottky barrier thickness and hence the tunneling probability.…”

mentioning

confidence: 99%

Three-dimensional shaping of sub-micron GaAs Schottky junctions for zero-bias terahertz rectification

Casini¹,

Gaspare²,

Giovine³

et al. 2011

Applied Physics Letters

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We demonstrate a rectification mechanism based on quantum tunneling through the narrow Schottky barrier of a sub-micrometric Au/Ti/n-GaAs junction, which is capable of efficient power detection of free-space terahertz radiation beams even without an applied dc bias. Three-dimensional shaping of the junction geometry provides an enhanced zero-bias tunneling probability due to increased electric fields at the junction, resulting in cutoff frequencies up to 0.55 THz, responsivity up to 200 V/W, and noise equivalent power better than 10 -9 W/Hz 0.5 without applied dc bias

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“…Above approximately 1:0 THz, the spectral signatures of many explosive solid materials are available for capture [5] by using, e.g., THz time-domain spectroscopy (THz-TDS) for imaging [4]. Recent advances in THz generation and detection technologies [6] enable the design and development of more compact and potentially portable THz imaging systems. Substantial stand-off threat detection-discrimination will be a crucial aspect of all future THz-based security imaging systems intended to effectively counter today's asymmetric terrorist threats.…”

Section: Introductionmentioning

confidence: 99%

Terahertz imaging system performance model for concealed-weapon identification

et al. 2008

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The U.S. Army Night Vision and Electronic Sensors Directorate (NVESD) and the U.S. Army Research Laboratory have developed a terahertz (THz) -band imaging system performance model for detection and identification of concealed weaponry. The MATLAB-based model accounts for the effects of all critical sensor and display components and for the effects of atmospheric attenuation, concealment material attenuation, and active illumination. The model is based on recent U.S. Army NVESD sensor performance modeling technology that couples system design parameters to observer-sensor field performance by using the acquire methodology for weapon identification performance predictions. This THz model has been developed in support of the Defense Advanced Research Project Agencies' Terahertz Imaging Focal-Plane Technology (TIFT) program and is currently being used to guide the design and development of a 0:650 THz active-passive imaging system. This paper will describe the THz model in detail, provide and discuss initial modeling results for a prototype THz imaging system, and outline plans to calibrate and validate the model through human perception testing.

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Terahertz sources and detectors

Cited by 26 publications

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Terahertz detectors and focal plane arrays

Terahertz detectors and focal plane arrays

Three-dimensional shaping of sub-micron GaAs Schottky junctions for zero-bias terahertz rectification

Terahertz imaging system performance model for concealed-weapon identification

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