Thin film lithium niobate electro-optic modulator with terahertz operating bandwidth

Mercante, Andrew; Shi, Shouyuan; Yao, Peng; Xie, Ling; Weikle, Robert M.; Prather, Dennis W.

doi:10.1364/oe.26.014810

Cited by 180 publications

(95 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The measured RF V π values remain relatively constant over a broad frequency range. The flatness of the frequency response indicates that the device could also perform well at very high frequencies exceeding 100 GHz [4,42], showing high potential for millimeter-wave and terahertz applications. Further reducing the electrode gap and the RF loss could lead to even lower RF V π and broader EO combs.…”

mentioning

confidence: 99%

An Integrated Low-Voltage Broadband Lithium Niobate Phase Modulator

Ren

Zhang

Wang

et al. 2019

IEEE Photon. Technol. Lett.

View full text Add to dashboard Cite

Electro-optic phase modulators are critical components in modern communication, microwave photonic, and quantum photonic systems. Important for these applications is to achieve modulators with low half-wave voltage at high frequencies.Here we demonstrate an integrated phase modulator, based on a thin-film lithium niobate platform, that simultaneously features small on-chip loss (∼ 1 dB) and low half-wave voltage over a large spectral range (3.5 -4.5 V at 5 -40 GHz). By driving the modulator with a strong 30-GHz microwave signal corresponding to around four half-wave voltages, we generate an optical frequency comb consisting of over 40 sidebands spanning 10 nm in the telecom L-band. The high electro-optic performance combined with the high RF power-handling ability (3.1 W) of our integrated phase modulator are crucial for future photonics and microwave systems.

show abstract

mentioning

confidence: 99%

An Integrated Low-Voltage Broadband Lithium Niobate Phase Modulator

Ren

Zhang

Wang

et al. 2019

IEEE Photon. Technol. Lett.

View full text Add to dashboard Cite

show abstract

“…al. show modulations speeds up to 500 GHz or ±4 nm at 1550 nm [33], demonstrating the potential of this standard technique applied to quantum states of light.…”

Section: Resultsmentioning

confidence: 90%

Reconfigurable frequency coding of triggered single photons in the telecom C–band

et al. 2019

View full text Add to dashboard Cite

In this work, we demonstrate reconfigurable frequency manipulation of quantum states of light in the telecom C-band. Triggered single photons are encoded in a superposition state of three channels using sidebands up to 53 GHz created by an off-the-shelf phase modulator. The single photons are emitted by an InAs/GaAs quantum dot grown by metal-organic vaporphase epitaxy within the transparency window of the backbone fiber optical network. A cross-correlation measurement of the sidebands demonstrates the preservation of the single photon nature; an important prerequisite for future quantum technology applications using the existing telecommunication fiber network. IntroductionQuantum information science is an interdisciplinary field wherein quantum mechanics sets rules for logical bits (qubits), gates and interconnects [1]. Transferring quantum information between stationary nodes is one of the requirements to scale the field beyond isolated locations [2].Qubit teleportation protocols [3][4][5][6] or direct state transfer methods [7,8] between two nodes are commonly built based on single photons, so called "flying qubits". Photons at a wavelength of 1.55 µm [9] (C-band) can travel over large distances in optical fibers and are ideal candidates to distribute entanglement or exchange quantum information between distant network nodes, known as "quantum internet" [2, 10]. The advantage of pre-existing infrastructure for optical classical communication networks [11] leads to faster and cheaper adoption of quantum communication.Semiconductor quantum dots (QDs) are promising sources for flying qubits at 1.55 µm [12][13][14], due to the deterministic generation of single photons [15] and polarization entangled photon pairs [16,17]. The quantum dot growth via metal-organic vapor-phase epitaxy enables industrial large-scale fabrication in future photonic quantum technology applications. By combining this industry grade growth technique, used for example in LED manufacturing, with nanofabrication methods, QDs establish themselves as scalable, integratable [18] and tunable sources for the C-band [19]. As compared to the standard InP-based materials for this wavelength range, the choice of InAs/GaAs quantum dots has several advantages regarding the optical properties of the quantum dots and due to the possibility to grow lattice-matched DBRs with high refractive index contrast materials, the possibilities for cavity-enhanced emission enabling ultra-high repetition rates [13,20].Building up multi-node quantum networks requires multiple sources which need to be tuned in arXiv:1903.05556v2 [cond-mat.mes-hall]

show abstract

“…Lithium niobate on insulator (LNOI) is emerging as a promising platform for photonic technology. Recent works highlight the potential of the high index contrast lithium niobate platform through low-loss waveguides [1], optical modulators [2,3], tunable ring resonators [4][5][6] and nonlinear effects [7]. This platform has potential to make a mark in fields ranging from telecommunications [2,3] to quantum computing and communication [8] as well as sensing [9]; however, many challenges are yet to be overcome.…”

Section: Introductionmentioning

confidence: 99%