2019
DOI: 10.1109/lpt.2019.2911876
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An Integrated Low-Voltage Broadband Lithium Niobate Phase Modulator

Abstract: Electro-optic phase modulators are critical components in modern communication, microwave photonic, and quantum photonic systems. Important for these applications is to achieve modulators with low half-wave voltage at high frequencies.Here we demonstrate an integrated phase modulator, based on a thin-film lithium niobate platform, that simultaneously features small on-chip loss (∼ 1 dB) and low half-wave voltage over a large spectral range (3.5 -4.5 V at 5 -40 GHz). By driving the modulator with a strong 30-GH… Show more

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Cited by 104 publications
(64 citation statements)
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References 39 publications
(50 reference statements)
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“…Recently, monolithic integration of thin film lithium niobite modulators [8][9][10][11][12][13][14] has attracted an increasing attention due to significant higher optical confinement, leading to improvements in terms of compactness, bandwidth and energy efficiency, while still demanding relatively long, on the mm-scale, interaction lengths due to conceptional limitations in the electro-optic field overlap.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, monolithic integration of thin film lithium niobite modulators [8][9][10][11][12][13][14] has attracted an increasing attention due to significant higher optical confinement, leading to improvements in terms of compactness, bandwidth and energy efficiency, while still demanding relatively long, on the mm-scale, interaction lengths due to conceptional limitations in the electro-optic field overlap.…”
Section: Introductionmentioning
confidence: 99%
“…To further suppress the optical carrier to improve the RF gain, one possible approach is to use a phase modulation configuration and hybrid photonic circuits consisting SBS waveguides and ring resonators [28]. Furthermore, integrated phase modulator with a lower RF half-wave voltage of 3.5 V at 10 GHz [29] and on-chip photodetector with a higher responsivity of 1.04 A/W [30] are available on the shelf, which can be used to improve the RF gain, according to Eq. (3).…”
Section: Discussionmentioning
confidence: 99%
“…In recent years, based on this rapidly-growing technology, a plethora of ultracompact integrated photonic devices and circuits, such as microdisk [59][60][61][62] and microring [46,[63][64][65][66] resonators, EO modulators, [67][68][69][70][71][72][73][74][75][76][77][78][79][80][81][82][83][84][85] acousto-optic modulators, [86][87][88][89] photodetector, [90] integrated single-photon detector, [91] grating couplers, [92][93][94][95][96] fiber-to-chip edge couplers, [97][98][99] wavelength Figure 2. Summary of the steps for fabrication of TFLN on Si wafers.…”
Section: Introductionmentioning
confidence: 99%