The effects of hydrogenation on the properties of Zn-doped InP/GaAs heterostructures grown by metalorganic chemical vapor deposition were studied by current-voltage (I-V), deep level transient spectroscopy (DLTS), and photoluminescence. Significant improvements in leakage current and breakdown voltage in InP diodes on GaAs were observed after a 2 h hydrogen plasma exposure at 250 °C. DLTS indicated a corresponding reduction in total trap concentration from ∼6×1014 to ∼3×1012 cm−3 at a depth of ∼1.5 μm below the surface. The Zn dopants were completely reactivated by a subsequent 5 min 400 °C anneal without degradation of the reverse current or reactivation of the deep levels. Anneals in excess of 580 °C were necessary to reactivate the deep levels and degrade the leakage current to their original values, indicating the passivation of threading dislocations by hydrogen, and the existence of a wide temperature window for post-passivation processing.

SiGeSn ternary alloys offer a means to fabricate a 1.0-eV subcell junction for inclusion in a multijunction solar cell. The main advantage of the SiGeSn alloy is a tuneable bandgap energy and variable lattice parameter, enabling the material to be integrated into the existing lattice-matched multijunction architectures. Recent growth, structural, optical, and device results from SiGeSn material, with energy gaps in the vicinity of 1.0 eV and lattice matched to Ge substrates, are presented. An all latticematched InGaP/InGaAs/SiGeSn triple-junction cell is presented and compared with a conventional InGaP/InGaAs/Ge solar cell. Comparable short-circuit current values of 13.9 mA/cm 2 are obtained for both devices under the AM1.5G spectrum, whereas the open-circuit voltage and fill factor are reduced in the device with the SiGeSn subcell. Peak external quantum efficiency in the SiGeSn single junction in excess of 80% is realized, placing a lower limit on the base minority hole diffusion length of 5 μm with surface recombination velocities in close agreement to those found in bulk Ge material.

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Non-uniform irradiance patterns over Multi-Junction Cells gives rise to power losses, especially when considering spectral irradiance distributions over different junctions. Thermal effects on Silicone-on-Glass lenses affect spectral irradiance distributions.

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