The reactively sputtered Nb 2 O 5-based metal-oxide-semiconductor devices deposited under different O 2 ∕Ar ratios have been studied using laboratory-based X-ray reflectivity (XRR) and synchrotron-based X-ray photoelectron spectroscopy techniques. The I − V characteristics reveal a sharp transition in the magnitude of current (∼ up to five orders) signifying a switching phenomenon between high-resistance and low-resistance states. The electron density profile, derived from XRR data, shows a dependence of the switching properties on the film porosity. Further, the non-lattice oxygen in the film also plays a role in determining the on/off ratio of the devices. Therefore, besides the presence of non-lattice oxygen, film porosity also influences the resistive switching behavior of the Nb 2 O 5-based devices.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.