Rolls of flexible electrophoretic panels have been prepared by the SiPix roll‐to‐roll manufacturing process based on novel Microcup® and top‐sealing technologies. The resultant Microcup® passive matrix electrophoretic displays (PMEPDs) and a‐Si TFT active matrix electrophoretic displays (AMEPDs) have shown outstanding contrast ratio, switching rate, image bistability, threshold characteristics, grayscale capability, operation temperature latitude, and physicomechanical properties.

Abstract— Rolls of flexible displays or electronic paper have recently been prepared by a high‐speed roll‐to‐roll manufacturing process based on SiPix's novel Microcup® and top‐sealing technologies. Both Microcup® electrophoretic displays (EPDs) and LCDs have been demonstrated. The display rolls are format flexible and may be cut into desirable size and shape for a variety of applications. High‐performance flexible passive‐matrix Microcup® EPDs having a wide range of threshold voltages have also been demonstrated.

Microlens arrays (MLAs) have attracted wide attention due to their crucial applications in optics, optoelectronics, and biochemistry. In this paper, we present a simple and green approach for the economical fabrication of MLAs with controlled curvature based on water condensing. By controlling the input current and working time of initiative cooling and the viscoelasticity of UV-curable polymer, uniform porous films with adjustable morphology were prepared. MLAs with aspect ratios of 1.41, 1.01, and 0.69 were fabricated by micromolding the porous film templates. Furthermore, the fluoropolymer encapsulations with the MLAs were applied for the packaging of deep ultraviolet light-emitting diodes (DUV-LEDs). Consequently, the light output powers of DUV-LEDs are enhanced by 7.1%, 10.2%, and 15.4%, respectively, by using these MLAs at the driving current of 350 mA.

Ultraviolet light-emitting diodes (UV-LEDs) have drawn considerable attention in environment, life science, and industry fields, such as the applications of near UV-LEDs in resin curing, illumination, and identification, and deep UV-LEDs in disinfection, medical treatment, and biochemical inspection. However, due to the limitation of packaging technology, UV-LED devices exhibit low light efficiency and poor reliability compared with visible LEDs. The organic encapsulation materials are prone to UV aging, thermal degradation, and nonairtightness, which significantly reduce the performances of UV-LEDs. In order to solve this issue, UV-LED packaging technology has been proposed for UV-LED devices instead of conventional LED packaging. In this review, we investigated in detail the overview and challenges of near-ultraviolet light-emitting diodes (NUV-LED)/deep-ultraviolet light-emitting diodes (DUV-LED) packaging. For the packaging of UV-LEDs, all inorganic encapsulation materials, hermetic packaging structures with low-temperature bonding, reduced reflection losses, UV stable and transparent materials, and effective thermal management are key progresses to enhance the light efficiency and reliability of UV-LEDs. In addition, the summary and perspectives of NUV-LED/DUV-LED packaging were introduced and discussed.

In this work, we propose and optimize the sidewalls for the mesa to enhance the optical power for AlGaN-based deep ultraviolet light-emitting diodes (LEDs). We obtain the mesa with the inclined sidewalls by conducting dry etching. The optical performance for LED devices with different inclination angles are tested by putting the integrated sphere on the sapphire side of the devices. The DUV LED with the optimal angle of 37.83°yields the 48% optical power enhancement at the current density of 35 A/cm 2 as compared with the reference device. The physical mechanism for the impact of the mesa inclination angle on the light extraction efficiency is also discussed both theoretically and experimentally. Then, we find that once the Al reflector is evaporated on the insulated silica dioxide that is coated on the sidewall of the mesa, the light extraction efficiency for the TM-polarized DUV photons and the optical power can be further improved.

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Defect behaviors in the degradation of AlGaN-based UV-C light emitting diodes (LEDs) under constant current stress have been intensively investigated in this work. It is found that both the reduction of the optical power and the increase in the leakage current are derived from the newly generated Ga vacancy (VGa) along dislocation, based on the evidence of a strong “yellow” emission peak at 515 nm in the photoluminescence spectra and an energy level of 0.25–0.38 eV. More importantly, the defect evolution behind it was determined through the deep level transient spectroscopy, secondary ion mass spectrometry measurements, and density functional theory. VGa is found to be generated by the departure of the unintentionally doped Mg from MgGa along dislocation in the Si-doped region. The high activity of the unintentionally doped Mg under electrical stress can be an essential factor in the degradation of UV-C LEDs. This study not only provides an in-depth insight into the electrical stress-induced degradation in UV-C LEDs but also sheds light on the way for fabricating AlGaN-based devices with high reliability.

In this work, combined analysis of internal strain effects on optical polarization and internal quantum efficiency (IQE) were conducted for the first time. Deep ultraviolet light extraction efficiency of AlGaN multiple quantum wells (MQWs) have been investigated by means of polarization-dependent photoluminescence (PD-PL) and temperature-dependent photoluminescence (TD-PL). With the increase of compressive internal strain applied to the MQWs by an underlying n-AlGaN layer, the degree of polarization (DOP) of the sample was improved from -0.26 to -0.06 leading to significant enhancement of light extraction efficiency (LEE) as the PL intensity increased by 29.2% even though the internal quantum efficiency declined by 7.7%. The results indicated that proper management of the internal compressive strain in AlGaN MQWs can facilitate the transverse electric (TE) mode and suppress the transverse magnetic (TM) mode which could effectively reduce the total internal reflection (TIR) and absorption. This work threw light upon the promising application of compressively strained MQWs to reduce the wave-guide effect and improve the LEE of deep ultraviolet light emitting diodes (DUV LEDs).