Graphene/silicon (G/Si) heterojunction based devices have been demonstrated as high responsivity photodetectors that are potentially compatible with semiconductor technology. Such G/Si Schottky junction diodes are typically in parallel with gated G/silicon dioxide (SiO2)/Si areas, where the graphene is contacted. Here, we utilize scanning photocurrent measurements to investigate the spatial distribution and explain the physical origin of photocurrent generation in these devices. We observe distinctly higher photocurrents underneath the isolating region of graphene on SiO2 adjacent to the Schottky junction of G/Si. A certain threshold voltage (VT) is required before this can be observed, and its origins are similar to that of the threshold voltage in metal oxide semiconductor field effect transistors. A physical model serves to explain the large photocurrents underneath SiO2 by the formation of an inversion layer in Si. Our findings contribute to a basic understanding of graphene/semiconductor hybrid devices which, in turn, can help in designing efficient optoelectronic devices and systems based on such 2D/3D heterojunctions.

Graphene is a material with enormous potential for numerous applications. Therefore, significant efforts are dedicated to large‐scale graphene production using a chemical vapor deposition (CVD) technique. In addition, research is directed at developing methods to incorporate graphene in established production technologies and process flows. In this paper, we present a brief review of available CVD methods for graphene synthesis. We also discuss scalable methods to transfer graphene onto desired substrates. Finally, we discuss potential applications that would benefit from a fully scaled, semiconductor technology compatible production process.

We report the first realization of a cw solid-state dye laser. The laser medium consists of a laser dye (Rhodamine 6G) dissolved in a photopolymer. The UV-cured solution is sandwiched between two DVD substrates. The resonator design was derived from a conventional liquid solvent dye laser geometry. The laser radiation can be tuned from 565 to 615 nm by using a birefringent filter. A pump power of 2 W leads to a cw output power of more than 20 mW.

Astaxanthin, a carotenoid found in plants and seafood, exhibits antiproliferative, antioxidant and anticarcinogenic properties. We show that astaxanthin delivered with tetrahydrofuran is effectively taken up by cultured colon adenocarcinoma cells and is localized mostly in the cytoplasm as detected by confocal resonance Raman and broad-band fluorescence microspectroscopy image analysis. Cells incubated with beta-carotene at the same concentration as astaxanthin (10 microM) showed about a 50-fold lower cellular amount of beta-carotene, as detected by HPLC. No detectable Raman signal of beta-carotene was found in cells, but a weak broad-band fluorescence signal of beta-carotene was observed. beta-Carotene, like astaxanthin, was localized mostly in the cytoplasm. The heterogeneity of astaxanthin and beta-carotene cellular distribution in cells of intestinal origin suggests that the possible defense against reactive molecules by carotenoids in these cells may also be heterogeneous.

We demonstrate a facile fabrication technique for graphene-based transparent conductive films. Highly flat and uniform graphene films are obtained through the incorporation of an efficient laser annealing technique with one-time drop casting of high-concentration graphene ink. The resulting thin films are uniform and exhibit a transparency of more than 85% at 550 nm and a sheet resistance of about 30 kΩ/□. These values constitute an increase of 45% in transparency, a reduction of surface roughness by a factor of four and a decrease of 70% in sheet resistance compared to un-annealed films.