Electronic properties of GaInNAs thin films have been investigated by the temperature-dependent Hall-effect and persistent photoconductivity (PPC) measurements. The Ga x In 1Àx N y As 1Ày thin films were grown by metal-organic chemical vapor deposition (MOCVD) on GaAs(100) substrates. High resolution X-ray diffraction (HR-XRD) and photoluminescence (PL) were used to determine the crystal quality. Compared with the N-free sample, the mobility of the GaInNAs sample quenched significantly due to the lattice defects induced by the small amount of nitrogen atoms incorporated during growth. The free carrier concentration of the GaInNAs samples was not affected by the increasing temperature ranging from 120 K to 400 K. Persistent photoconductivity (PPC) was also observed in this material, and the properties of PPC were found to depend on the temperature and nitrogen content. The relationship between trend toward saturation of the free carrier concentration of the temperature-dependent Hall measurement and PPC is also discussed.
We report the growth of InN by metalorganic chemical vapor deposition on Si(111) substrates. It was found that the sharpest InN(002) x-ray diffraction peak could be achieved from the sample prepared on a complex buffer layer that consists of a low-temperature AlN, a graded Al x Ga 1-x N (x = 1 fi 0), and a high-temperature GaN. The resultant mobility of 275 cm 2 /V s thus obtained was 75% larger than that of the InN prepared on a single LT-AlN buffer layer only.
Zinc oxide thin films were prepared on the glass substrate by rf-magnetron sputtering technique and their structural, optical, and mechanical characteristics were then investigated. As the SEM images have revealed, the average grain size of ZMO thin film are influenced by pressure and sputter power, and the average value of the grain size is about 30~50 nm. The EDS analysis also revealed a successful doping of Mo in ZnO thin film. The transmittance property of ZMO thin film exhibited an excellent transparency in the visible range, where the transmittance was about 90% for ZMO film with Mo. Moreover, good transmittance was also demonstrated in the range of 350nm to 400nm (UV regime). Finally, the nano-mechanical properties of ZMO thin films were investigated using a nanoindentation technique. The corresponding result would show that the Young’s modulus and hardness both increased with decreasing pressure.
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