Study of Electronic Properties by Persistent Photoconductivity Measurement in GaxIn1-xNyAs1-y Grown by MOCVD

Hsu, Shu-Hau; Su, Yan–Kuin; Chuang, R. W.; Chang, Shoou‐Jinn; Chen, W. C.; Chen, W. R.

doi:10.1143/jjap.44.2454

Cited by 5 publications

(2 citation statements)

References 21 publications

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“…These two decay processes mean that these are two steps of exponential decay for the photocurrent when the light is switched off. 32) The sum of K 1 and K 2 is unity at zero frequency. For the Co-doped MoS 2 sample, the fitted results are K 1 = 0.74 and K 2 = 0.26 with τ 1 of 50 ms and τ 2 of 1.45 ms, while for the undoped MoS 2 sample, the coefficients K 1 = 0.21 and K 2 = 0.79 are obtained, and the time constants τ 1 and τ 2 are 25 and 0.8 ms, respectively.…”

Section: Resultsmentioning

confidence: 99%

Electrical and optical properties of Co-doped and undoped MoS₂

Huang

Lin

et al. 2016

Jpn. J. Appl. Phys.

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Co-doped and undoped layered MoS 2 crystals were grown by the chemical vapor transport method using iodine as the transport agent. Both reflectance and piezoreflectance measurements reveal two exciton transitions of the direct band edge around 1.86 and 2.06 eV for undoped MoS 2 and 1.84 and 2.03 eV for Co-doped MoS 2 . Hall effect measurements show that the Co-doped MoS 2 sample has a lower carrier concentration and mobility than the undoped sample. These differences between undoped and Co-doped MoS 2 were attributed to the effect of cobalt atoms causing a small lattice distortion, lattice imperfections and/or impurity states that form trap states between the conduction band and valence band. Furthermore, photoconductivity (PC) and persistent PC results show that Co-doped MoS 2 has a longer time constant and better responsivity than undoped MoS 2 . This work discusses the advantages of Co-doped MoS 2 for photodetector applications.

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Section: Resultsmentioning

confidence: 99%

Electrical and optical properties of Co-doped and undoped MoS₂

Huang

Lin

et al. 2016

Jpn. J. Appl. Phys.

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“…To overcome this problem, the intrinsic layer inserted into p-n junction is used for enlarging the width of depletion region and raise the photocurrent generation. [5][6][7][8] In this study, we have grown p-GaAs/i-InGaAsN/n-GaAs double heterojunction solar cell by AIX200 metalorganic chemical vapor deposition (MOCVD) to investigate the optimum growth temperature of intrinsic InGaAsN layer, and discuss the electrical property.…”

Section: Introductionmentioning

confidence: 99%

Growth, Fabrication, and Characterization of InGaAsN Double Heterojunction Solar Cells

Lin

et al. 2011

Jpn. J. Appl. Phys.

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In this paper, we have demonstrated fabrication and characterization of p-GaAs/i-InGaAsN/n-GaAs double heterojunction solar cells (DHJSCs). The intrinsic InGaAsN absorption layers which were lattice-matched to GaAs substrate with photoresponse to 1 eV were grown by the metal organic chemical vapor deposition method. The samples were studied experimentally by varying the growth temperature of intrinsic InGaAsN absorption layers. By adjusting the indium and nitrogen content, we have grown InGaAsN epilayers which were lattice-matched to GaAs substrate at various growth temperatures. Among three intrinsic layer growth temperatures, it was found that the InGaAsN DHJSC with the intrinsic layer growth temperature of 550 C can get the largest absorption region. Under the AM 1.5 direct spectrum, the DHJSCs with absorption layer which were grown at 550 C have open-circuit voltages ranging from 0.295 V, short-circuit currents of 14.4 mA/cm 2 , and fill factor of 51.2%. The conversion efficiency of InGaAsN double heterojunction solar cells achieves 2.38%, and the absorption wavelength region would extend to 1200 nm. #

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