The Schottky barrier height (ΦB) and reverse breakdown voltage (VB) of Au/n-SiC diodes were used to examine the effect of inductively coupled plasma SF6/O2 discharges on the near-surface electrical properties of SiC. For low ion energies (⩽60 eV) in the discharge, there is minimal change in ΦB and VB, but both parameters degrade at higher energies. Highly anisotropic features typical of through-wafer via holes were formed in SiC using an Al mask.
Articles you may be interested inEffects of type of reactor, crystallinity of SiC, and N F 3 gas pressure on etching rate and smoothness of SiC surface using N F 3 gas plasma Four different F 2 -based plasma chemistries for high-rate etching of SiC under inductively coupled plasma ͑ICP͒ conditions were examined. Much higher rates ͑up to 8000 Å min Ϫ1 ͒ were achieved with NF 3 and SF 6 compared with BF 3 and PF 5 , in good correlation with their bond energies and their dissociation efficiency in the ICP source. Three different materials ͑Al, Ni, and indium-tin oxide͒ were compared as possible masks during deep SiC etching for through-wafer via holes. Al appears to produce the best etch resistance, particularly when O 2 is added to the plasma chemistry. With the correct choice of plasma chemistry and mask material, ICP etching appears to be capable of producing via holes in SiC substrates.
We report absorption measurements on two types of long-wave infrared detector structures. Both types were grown by ultrahigh vacuum chemical vapor deposition, and were characterized by multiple analytic techniques. In both multiple quantum well (MQW) and heterojunction internal photoemission (HIP) structures, it is found that free-carrier absorption is dominant for normally incident radiation. The measured absorption is fit well by the classical expression for free-carrier absorption, with scattering times of about 10−14 s (MQW) and 5×10−15 s (HIP). The measured absorption is used to evaluate the responsivity that results when all carriers energetically able to surmount the barrier are collected. Based on this analysis, higher responsivity is predicted for HIP detectors, largely because of the greater density of initial states. The responsivity obtained in practice depends upon the photoconductive gain (MQW detectors) or the escape probability (HIP detectors). The escape probability for HIP detectors is measured in Part II.
Ge x Si 1−x / Si heterojunction internal photoemission (HIP) detectors with thresholds in the medium-wave infrared and long-wave infrared (LWIR) regions were fabricated and characterized. Measurements of the photoresponse are fit well by a theory which takes into account the scattering of excited carriers. The probability of escape of an excited hole is calculated and compared with that observed in another detector, the multiple quantum well structure. It is shown that HIP detectors can achieve background-limited performance in the LWIR region when operated at 40 K.
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