The Schottky barrier height (ΦB) and reverse breakdown voltage (VB) of Au/n-SiC diodes were used to examine the effect of inductively coupled plasma SF6/O2 discharges on the near-surface electrical properties of SiC. For low ion energies (⩽60 eV) in the discharge, there is minimal change in ΦB and VB, but both parameters degrade at higher energies. Highly anisotropic features typical of through-wafer via holes were formed in SiC using an Al mask.

Articles you may be interested inEffects of type of reactor, crystallinity of SiC, and N F 3 gas pressure on etching rate and smoothness of SiC surface using N F 3 gas plasma Four different F 2 -based plasma chemistries for high-rate etching of SiC under inductively coupled plasma ͑ICP͒ conditions were examined. Much higher rates ͑up to 8000 Å min Ϫ1 ͒ were achieved with NF 3 and SF 6 compared with BF 3 and PF 5 , in good correlation with their bond energies and their dissociation efficiency in the ICP source. Three different materials ͑Al, Ni, and indium-tin oxide͒ were compared as possible masks during deep SiC etching for through-wafer via holes. Al appears to produce the best etch resistance, particularly when O 2 is added to the plasma chemistry. With the correct choice of plasma chemistry and mask material, ICP etching appears to be capable of producing via holes in SiC substrates.

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