One of the most important problems to solve in order to improve the CdTe solar cell performance is the deposition of stable ohmic contacts. W and Mo with their high work function, high temperature stability and good mechanical properties are prospective materials for contacts to p-CdTe. This paper presents data for the electrophysical characteristics of W or Mo/CdTe and W or Mo/ CdS-CdTe heterostructure systems. W and Mo films are deposited by a W(CO)6 based CVD process at atmospheric pressure and low temperatures (250–300)°C. We emphasize the improvment of the contact properties by developing a transitional layer heavily doped with acceptors. The defects arrangement in the layer should promote the diffusion of such impurities as Cu, P, As etc. A proper balance between the impurities and the defects could be achieved by suitable thermal treatment. Rapid thermal or traditional annealing in different gas atmospheres – N2, Ar or air were applied, followed by chemical or electrochemical treatment. Electrical characteristics measurements and structural studies were performed for CdTe layers as well as for the SnO2 - CdS - CdTe structures
The possibilities for substitution of several contact pre-deposition procedures by one technological step have been investigated with the aim of improving solar cell performance and reduction of the corresponding production cost. Growth of a low-resistance buffer layer on the surface of a CdTe based solar cell is interesting not only from a practical point of view but also concerning the structural and compositional changes introduced in the CdS-CdTe heterostructures. Information about the electrical properties of the layers involved is presented and discussed with respect to the further extension of this method.
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