The paper presents the results on developing a technological process for in-situ growing in CVD reactor of W0 3 electrochromic thin films.Films were deposited at 290 °C on In 2 0 3 :Sn and Sn02 covered pyrex substrates by deposition in APCVD reactor using W(CO) 6 as precursor. The basical process is pyrolitical decomposition of W(CO) 6 and in presence of oxygen bearing gases W0 3 films were grown. The process proceeds at atmospheric pressure. Optimization of the process parameters such as oxygen flow rate, argon passing the precursor chamber and the diluent argon flow permitted achievement of high growt rates in the order of 30 A/s.Reflection High Energy Electron Diffraction (RHEED), Scanning Electron Microscopy (SEM), Infrared Spectroscopy(IRS) were applied for structural studies. Results show that films grown are of amorphous phase , with spherically shaped, randomly distributed structural unites. Additional heating at 450 0 C for 15 minutes in oxygen bearing gas atmosphere leads to W0 3 films of better transmittance and they posses monoclinic polycrystalline structure with a certain degree of texturing. The observed peak at 700 cm' in the IR spectrum is additional evidence for W0 3 phase structure.
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