Deposition and characterization of CVD-tungsten and tungsten carbonitrides on (100) Si

Gesheva, K.A.; Vlakhov, E.; Stoyanov, G. I.; Beshkov, G.; Marinov, M.

doi:10.1016/0272-8842(95)00060-7

Cited by 9 publications

(8 citation statements)

References 6 publications

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“…Other effective methods of sputtering include High Target Utilization Sputtering (HiTUS) [15] and High-Power Impulse Magnetron Sputtering (HiPIMS) [3]. WC coatings can be deposited by using the CVD method [16,17]. A disadvantage of the CVD method is its high depositing temperatures, ranging from 800 to 1200 • C, which exclude, for example, aluminum alloy from being coated.…”

Section: Introductionmentioning

confidence: 99%

Microstructure and Mechanical Properties of Annealed WC/C PECVD Coatings Deposited Using Hexacarbonyl of W with Different Gases

et al. 2020

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The present work studies the tungsten carbide (WC/C) coatings deposited by using Plasma Enhanced Chemical Vapor Deposition (PECVD), with and without gases of Ar and N2. Volatile hexacarbonyl of W was used as a precursor. Their mechanical and tribological properties were evaluated. The following values were obtained by using deposition process with N2 of HIT = 19.7 ± 4.1 GPa, EIT = 221 ± 2.1 GPa, and coefficient of friction (COF) = 0.35 ± 0.09. Secondly, deposition without the aforementioned gas obtained values of HIT = 20.9 ± 2 GPa, EIT = 292 ± 20 GPa, and COF = 0.69 ± 0.05. WC/C coatings were annealed at temperatures of 200, 500, and 800 °C, respectively. Evaluated factors include the introduced properties, the observed morphology, and the structural composition of WC/C coatings. The process of degradation was carried out by using various velocities, depending on used gases and annealing temperatures.

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Section: Introductionmentioning

confidence: 99%

Microstructure and Mechanical Properties of Annealed WC/C PECVD Coatings Deposited Using Hexacarbonyl of W with Different Gases

et al. 2020

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“…[10][11][12] As reported, WCN films exhibit thermal stability after annealing up to 700uC, 13 low electrical resistivity and good adhesion to many different substrates. 11 Most studies reported in the past years, with specific regard to the production of WCN films, have used CVD techniques 14,15 since Gesheva et al 16 prepared WCN films by CVD. For example, Ajmera 17,18 prepared WCN films as a diffusion barrier by varying the deposition temperature.…”

Section: Introductionmentioning

confidence: 99%

Structure and mechanical properties of reactive sputtered WCN films

Zhao

2016

Surface Engineering

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The WCN films with different C contents were deposited under different substrate bias by a sputtering system. The composition, structure and mechanical properties were characterised by X-ray photoelectron spectroscopy, X-ray diffraction, high resolution transmission electron microscopy, scanning electron microscopy, atomic force microscopy and nanoindentation. Results showed that the WCN films consisted of WCN, W 2 N, amorphous C and CNx phases. With the incorporation of C content, the growth pattern changed from continuous columnar to discontinuous columnar due to grain refinement. By applying substrate bias to the films, the growth pattern changed from discontinuous columnar to fine grained structure because the bias could enhance the mobility of impinging ions or atoms leading to film densification. As increasing the C content, the hardness first increased and then decreased due to the effect of solid solution strengthening and grain refinement. However, the substrate bias had little influence on the hardness because of the co-action of the dense structure and residual stress induced by bias.

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“…Reactive sputtering using W, C, or WC target is frequently carried out with additional gases, such as hydrocarbon [6], N2, or SiH4 [7,8,17]. In addition to other existing progressive PVD sputtering methods, two other methods for such WC coatings are high target utilization sputtering (HiTUS) [18], high-power impulse magnetron sputtering (HiPIMS) [7], and the chemical vapor deposition (CVD) technique [19,20].…”

Section: Introductionmentioning

confidence: 99%

The Effect of Annealing Temperatures on Selected Properties of WC/C Coatings, Deposited Using Hexacarbonyl Wolfram in an N2-SiH4 Atmosphere

et al. 2021

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In this paper, we present the results of an experimental study on WC/C coatings, deposited by using plasma-enhanced chemical vapor deposition in an N2-SiH4 atmosphere, annealed at temperatures of 200, 500 and 800 °C, in which the hexacarbonyl of W was used as a precursor. During the experiments, the topography, chemical composition, morphology, as well as selected mechanical properties, such as hardness, Young’s modulus, and coefficient of friction of the WC/C coatings were analyzed. Annealing without the protective atmosphere in the mentioned temperatures caused a decrease in hardness (up to 15 ± 2.7 GPa). In addition, the coefficient of friction value increased only to 0.37 ± 0.03.

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Deposition and characterization of CVD-tungsten and tungsten carbonitrides on (100) Si

Cited by 9 publications

References 6 publications

Microstructure and Mechanical Properties of Annealed WC/C PECVD Coatings Deposited Using Hexacarbonyl of W with Different Gases

Microstructure and Mechanical Properties of Annealed WC/C PECVD Coatings Deposited Using Hexacarbonyl of W with Different Gases

Structure and mechanical properties of reactive sputtered WCN films

The Effect of Annealing Temperatures on Selected Properties of WC/C Coatings, Deposited Using Hexacarbonyl Wolfram in an N2-SiH4 Atmosphere

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