1999
DOI: 10.1088/0953-8984/11/49/317
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Investigations of a buffer layer grown on a CdTe surface

Abstract: The possibilities for substitution of several contact pre-deposition procedures by one technological step have been investigated with the aim of improving solar cell performance and reduction of the corresponding production cost. Growth of a low-resistance buffer layer on the surface of a CdTe based solar cell is interesting not only from a practical point of view but also concerning the structural and compositional changes introduced in the CdS-CdTe heterostructures. Information about the electrical propertie… Show more

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Cited by 4 publications
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“…Through doping, it is possible to alter the electrical characteristics (e.g., conductivity) of a material and improve the performance of ZnS [ 26 ]. ZnS can also replace cadmium sulfide (CdS) as the buffer layer in copper indium gallium (di) selenide, (CIGS) solar cells [ 15 , 27 ]. ZnS is a promising material as the buffer layer because of its excellent chemical and physical properties, notably high visible light transmittance, high photoluminescence, efficient electron mobility, polar surface, excellent charge transport capabilities, etc.…”
Section: Introductionmentioning
confidence: 99%
“…Through doping, it is possible to alter the electrical characteristics (e.g., conductivity) of a material and improve the performance of ZnS [ 26 ]. ZnS can also replace cadmium sulfide (CdS) as the buffer layer in copper indium gallium (di) selenide, (CIGS) solar cells [ 15 , 27 ]. ZnS is a promising material as the buffer layer because of its excellent chemical and physical properties, notably high visible light transmittance, high photoluminescence, efficient electron mobility, polar surface, excellent charge transport capabilities, etc.…”
Section: Introductionmentioning
confidence: 99%