The quasi-static sliding contact stress field due to a spherical indenter on an elastic half-space with a single layer is studied. The contact problem is solved using a least-squares iterative approach and the stress field in the layer and substrate is determined using the Papkovich-Neuber potentials. The resulting stresses are discussed for different values of the layer stiffness relative to the substrate and also for different values of the friction coefficient.

BEOL-friendly Access Devices (AD) based on Cu-containing MIEC materials [1][2][3][4] are integrated in large (512×1024) arrays at 100% yield, and are successfully co-integrated together with Phase Change Memory (PCM). Numerous desirable attributes are demonstrated: the large currents (>200µA) needed for PCM, the bipolar operation required for high-performance RRAM, the single-target sputter deposition essential for high-volume manufacturing, and the ultra-low leakage (< 10 pA) and high voltage margin (1.5V) needed to enable large crosspoint arrays.

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