Sub-30nm scaling and high-speed operation of fully-confined Access-Devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC) materials

Virwani, Kumar; Burr, Geoffrey W.; Shenoy, Rohit S.; Rettner, C. T.; Padilla, Alvaro; Topuria, Teya; Ho, G.K.; King, R. S.; Nguyen, K.; Bowers, A. N.; Jurich, M.; BrightSky, M.; Joseph, Eric; Kellock, A. J.; Arellano, Noel; Kurdi, B. N.; Gopalakrishnan, Kailash

doi:10.1109/iedm.2012.6478967

Cited by 39 publications

(38 citation statements)

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“…A so-called mixed ionic electronic conduction (MIEC) device is developed as select devices for PCM [64][65][66][67]. The device is made from Cu-containing MIEC materials sandwiched between an inert top electrode (TE; e.g., TiN, W) and a bottom electrode (BE).…”

Section: Mixed Ionic Electronic Conduction Devicesmentioning

confidence: 99%

“…It was demonstrated that MIEC devices tolerate processing temperature up to 500°C and can be fabricated with manufacturinglevel single-target sputter deposition. The scalability of MIEC select devices was tested to below 30 nm in diameter and below 12 nm in thickness [67]. An integrated MIEC-PCM memory device can be switched at the speed of 15 ns and read within 1 μs at typical reading current (∼5 μA).…”

Section: Mixed Ionic Electronic Conduction Devicesmentioning

confidence: 99%

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Memory Select Devices

Chen

2014

Emerging Nanoelectronic Devices

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Section: Mixed Ionic Electronic Conduction Devicesmentioning

confidence: 99%

Section: Mixed Ionic Electronic Conduction Devicesmentioning

confidence: 99%

Memory Select Devices

Chen

2014

Emerging Nanoelectronic Devices

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“…In this article, we review our research on access devices based on Mixed-Ionic-ElectronicConduction (MIEC) [1][2][3][4][5][6][7], and show that these devices are highly suitable for multi-layer crossbar memory for resistive-NVM devices with modest switching voltages.…”

Section: Introductionmentioning

confidence: 99%

“…Such large nonlinearities can be implemented by including a distinct access device together with each of the state-bearing resistive-NVM elements. While such an access device need not store data, its list of requirements is almost as challenging as the specifications demanded of the memory device.We review our work on high-performance access devices based on Cu-containing Mixed-IonicElectronic Conduction (MIEC) materials [1][2][3][4][5][6][7]. (This version focuses only on the MIEC-based access device itself; previously-published longer versions of this work [8-10] also include more extensive surveys of competing devices as well.)…”

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confidence: 99%

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Mixed-Ionic-Electronic-Conduction (MIEC)-Based Access Devices for 3D Multilayer Crosspoint Memory

et al. 2015

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A number of applications call for the organization of resistive non-volatile memory (NVM) into large, densely-packed crossbar arrays. While resistive-NVM devices often possess some degree of inherent nonlinearity (typically 3-30× contrast), the operation of large (>1000×1000 device) arrays at low power tends to require large (> 1e7) ON-to-OFF ratios between the currents passed at high and at low voltages. Such large nonlinearities can be implemented by including a distinct access device together with each of the state-bearing resistive-NVM elements. While such an access device need not store data, its list of requirements is almost as challenging as the specifications demanded of the memory device.We review our work on high-performance access devices based on Cu-containing Mixed-IonicElectronic Conduction (MIEC) materials [1][2][3][4][5][6][7]. (This version focuses only on the MIEC-based access device itself; previously-published longer versions of this work [8-10] also include more extensive surveys of competing devices as well.) These devices require only the low processing temperatures of the Back-End-Of-the-Line (BEOL), making them highly suitable for implementing multi-layer crossbar arrays. MIEC-based access devices offer large ON/OFF ratios (>1e7), a significant voltage margin V m (over which current < 10nA), and ultra-low leakage (<10pA), while also offering the high current densities needed for PCM and the fully bipolar operation needed for high-performance RRAM. Scalability to critical dimensions (CD) <30nm and thicknesses <15nm, tight distributions and 100% yield in large (512kBit) arrays, long-term stability of the ultra-low leakage states, and sub-50ns turn-ON times have all been demonstrated. Numerical modeling of these MIEC-based access devices shows that their operation depends on Cu + mediated hole conduction. Circuit simulations reveal that while scaled MIEC devices are suitable for large crossbar arrays of resistive-NVM devices with low (<1.2V) switching voltages, a compact vertical stack of two MIEC devices in series could support large crossbar arrays for switching voltages up to 2.5V.

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Resistive‐Switching Memory

Ielmini

2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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Resistive‐switching random‐access memory (RRAM) based on ion migration in insulating layers might revolutionize future nanoelectronic circuits for both memory and logic. The high‐speed, low‐power change of resistance in RRAM can be exploited not only for data storage but also for reconfiguration of programmable logic circuits and for neuromorphic computation. In this review, the strengths and limitations of RRAM will be discussed. First, the RRAM concept will be reviewed in terms of memory operation and physical mechanisms for switching. The RRAM architectures will be discussed with emphasis on the crossbar array structure allowing for high density and reliable operation through proper selector devices. Finally, the RRAM applications in computing systems will be reviewed, addressing the RRAM switch in field‐programmable gate array (FPGA) and neuromorphic circuits.

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Sub-30nm scaling and high-speed operation of fully-confined Access-Devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC) materials

Cited by 39 publications

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Memory Select Devices

Memory Select Devices

Mixed-Ionic-Electronic-Conduction (MIEC)-Based Access Devices for 3D Multilayer Crosspoint Memory

Resistive‐Switching Memory

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