Nickel sulfide thin films were prepared using electrodeposition on indium tin oxide-coated glass substrates. Films were characterized using X-ray diffraction for crystallographic analysis. The films were shown to be polycrystalline in nature with good uniformity. From scanning electron micrographs, the surface appeared to be comparatively granular with irregularly shaped grains. From optical analysis, the bandgap range was between 1.22 eV and 1.15 eV with an indirect bandgap nature. Mott-Schottky plot confirmed that the films were found to be n-type, and the semiconductor parameters of the film were derived.
Preparation of thin film substrates and electrolytesAll reagents used for the deposition were of analytical grade. Prior to the deposition, the Indium Tin Oxide (ITO) coated glass substrates were ultrasonically cleaned in deionized water and followed by ethanol. All solutions were prepared using 30 ml of deionized water. The electrodeposition of thin film semiconductors on ITO-coated glass substrates was carried out at 40±2ºC of temperature in an aqueous solution containing Nickel Sulphate Hexahydrate, NiSO 4. 6H 2 O (1mM) + Sodium Thiosulphate Pentahydrate, Na 2 S 2 O 3 (3mM) as precursors
We report on the growth of low defect density Mo/Si multilayer (ML)
coatings. The coatings were grown in a deposition system specifically
designed for EUVL reticle blank fabrication. Complete, 81 layer, high
reflectance Mo/Si ML coatings were deposited on 150 mm diameter (100)
oriented Si wafer substrates using ion beam sputter deposition (IBSD).
Added defects, measured by optical scattering correspond to defect
densities of 2x10-2/cm2. This represents a
reduction in defect density of Mo/Si ML coatings by a factor of
105.
Thin films of nickel chalcogenide, NiX2 (X= Te, Se) have been electrosynthesized on indium-tin-oxide (ITO) coated glass substrates. The films were characterized for their structural, morphological and compositional characteristics. Consisting of transition metals and chalcogenides (S, Se and Te), they show promising solar absorbent properties such as semiconducting band gap, well adhesion to substrate and good conversion with better cost-effective. Cyclic voltammetry experiments have been done prior to electrodeposition in order to get the electrodeposition potential range where the observable reduction range is between -0.9-(-1.1) V. Their optical and semiconducting parameters were also analysed in order to determine the suitability of the thin films for photoelectrochemical (PEC) / solar cell applications. Structural analysis via X-ray diffraction (XRD) analysis reveals that the films are polycrystalline in nature. Scanning electron microscope (SEM) studies reveals that the films were adherent to the substrate with uniform and pin-hole free. Compositional analysis via energy dispersive X-ray (EDX) technique confirms the presence of Ni, Te, and Se elements in the films. The optical studies show that the films are of direct bandgap. Results on the semiconductor parameters analysis of the films showed that the nature of the Mott-Schottky plots indicates that the films obtained are of p-type material.
The nanostructural characteristics of direct-current magnetron sputter-deposited Ni4Al alloy films were studied during in situ isothermal annealing in a transmission electron microscope (TEM). An expansion of the lattice by nearly 5% was observed for the synthesized films in their low-thickness and as-deposited state. The lattice size approaches the bulk value when the film thickness increases or after vacuum annealing heat-treatment. The Ni4Al films have a nanocrystalline structure in which the ordered L12 phase appears upon annealing at above 500°C. A grain coalescence trend was found for the Ni4Al films during the in situ annealing above 500°C. This can be the main reason for the abnormal grain growth of these films at these high temperatures.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.