Electrosynthesized NiS2 thin films and their optical and semiconductor studies

Abstract

Nickel sulfide thin films were prepared using electrodeposition on indium tin oxide-coated glass substrates. Films were characterized using X-ray diffraction for crystallographic analysis. The films were shown to be polycrystalline in nature with good uniformity. From scanning electron micrographs, the surface appeared to be comparatively granular with irregularly shaped grains. From optical analysis, the bandgap range was between 1.22 eV and 1.15 eV with an indirect bandgap nature. Mott-Schottky plot confirmed that the films were found to be n-type, and the semiconductor parameters of the film were derived.

Structural and Optical Properties of Nickel Sulfoselenide (NiSSe) Thin Film for Photoelectrochemical Applications

“…In comparison with the previous research regarding NiSe2 thin film [6] and NiS2 thin film [7], the range of suitable deposition potential voltage to electrodeposited NiSSe thin film are in between the value for both CV value of NiSe2 and NiS2. Fig.…”

“…Transition metal chalcogenide are materials of semiconductors, which are capable to be used as an efficient photovoltaic material [2][3][4]. From the previous research, transition metal chalcogenides NiX2 (X= Se, S and Te) and MoX2 (X=Se, S and Te) have been showing a good result in term of optical and semiconducting properties as a new thin film material for solar energy in effort to replace the conventional method [5][6][7][8][9][10]. Transition metal chalcogenide thin films preparation by electrochemical methods is attracting to be given a special attention as it is relatively affordable, simple and convenient for large area deposition [5].…”

“…Good quality films can be potentially produced by changing the deposition parameters; for example bath temperature, pH of the bath, concentration of the solution and deposition time. The thin films are prepared on conducting tin oxide coated glass substrates as well as silicon and metal substrates [6][7][8][9][10].…”

“…Transition metal chalcogenides (MX2) where M=Ni and X=S or Se in term of NiSe2 and NiS2 type structure are often used for solar energy conversion in photoelectrochemical solar cells [6,7,11,12]. The dichalcogenides of Ni derivative are much more attracted due to the well matched band gap (Eg) with solar spectrum and specific lattice structure.…”

“…The dichalcogenides of Ni derivative are much more attracted due to the well matched band gap (Eg) with solar spectrum and specific lattice structure. In this research, the derivation from the method of producing NiSe2 thin film [6] and NiS2 [7] are implemented to produce the NiSSe thin film. The synthesis of the thin film from the growth mechanism until the characterization of the resulted film including compositional, Abstract: The transition metal, nickel is a favourable material to create combination with chalcogenides elements (S, Se and Te) to become either binary or ternary transition metal chalcogenide such NiSe2, NiSe, NiS2 and Ni3Se.…”