Experiments are described in which the energy distributions of positive and negative secondary ions are measured for four elements (Si, Fe, Cu, Ta) under Cs+ and Xe+ bombardment. It is shown that the energy dependence of the ratio of two corresponding energy distributions, calculated point by point is in very good agreement with the potential law of energy. With the help of these results the surface ionization model of Šroubek is examined.
At sufficiently low temperatures disorder production during ion implantation can be described in each case by the model of deposited elastic energy. With increasing temperature nucleation and segregation of defects become significant. By Rutherford backscattering technique with a high depth resolut,ion arrangement kinetics of defect nucleation are observed in dependence on temperature, ion mass, and presence of foreign atoms.Bei geniigend tiefen Temperaturen ist die Strahlenschadenserzeugung bei der Ionenimplantation in jedem Fall durch die deponierte elastische Energie beschreibbar. Mit steigender Implantationstemperatur gewinnen Nukleations-und Segregationseffekte an Bedeutung. Mit Hilfe der Rutherford-Ruckstreuung wird bei hoher Tiefenauflosung die Kinetik der Schadenserzeugung in Abhgngigkeit von Temperatur, Ionenmasse, und Fremdatombeimengungen im Target untersucht.
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