High conducting ITO films were deposited by DC magnetron sputtering using ITO targets. At substrate temperatures of 200°C and 300°C ITO films were reproducibly prepared with resistivities of 1.9×10-4 Ω·cm respectively 1,4×10-4 Ω·cm at a deposition rate of 20 Å/s. ITO films prepared at room temperature show after annealing at 200°C in air, nitrogen or vacuum the same low resistivity of 1.9×10-4 Ω·cm when using optimum sputtering conditions. The influence of the deposition temperature on the electrical, optical and etching properties was studied and related to the structure of the ITO films. Details on an optimized in line sputtering system for the economic large scale production of ITO films are presented.
Articles you may be interested inHigh reflectivity dielectric mirror deposition by reactive magnetron sputtering J. Vac. Sci. Technol. A 10, 3305 (1992); 10.1116/1.577816Modeling reactive sputtering process in symmetrical planar direct current magnetron systems A comparison of SiO2 planarization layers by hollow cathode enhanced direct current reactive magnetron sputtering and radio frequency magnetron sputtering Reactively rf magnetron sputtered AlN films as gate dielectric Dielectric layers like A1 2 0 3 • Si0 2 , and Si)N4 have been produced by a reactive ac magnetron sputtering process, using a two cathode arrangement. Within a frequency range between 10 and 100 kHz, where the ions still completely follow the ac field, deposition rates comparable to the de case could be achieved. In contrast to dc sputtering above a certain frequency of some ten kHz no disturbing charges on dielectric parts of the target surface can build up, thus preventing the well-known problem of arcing. Above this frequency the probability of arcing decreases to zero, leading to a stable process. High deposition rates of about 40 A/s could be realized for the AI-and Si-based reactive processes. This was achieved by a control unit combining the discharge voltage and the reactive gas flow in order to stabilize the transition between the metallic and the dielectric sputter mode. In case of dynamic deposition a homogeneous film thickness distribution on a substrate area of 350X450 mm 2 of better than ±5% was obtained. An easy scale-up to bigger cathodes is expected due to the simple coupling of the ac power to the cathodes in this frequency range. The investigated dielectric layers are characterized by optical and mechanical measurements.
High conducting ITO films were deposited by DC magnetron sputtering using ITO targets. At substrate temperatures of 200o C and 3000 C ITO films were reproducibty prepared with resistivities of Lr9 x lq-' Qcm respectively L,4 x 10-4 Qcm at a deposition rate of 20 A/ s , ITO films prepared at room temperature show after annealing at 2000 C in air, nitrogen or vacuum the same low resistivity of L 19 x 10-4 Ocm when using optimum sputtering conditions. The influence of the deposition temperature on the electrical ' optical and etching properties r,ras studied and related to the structure of the ITO films. Details on an optimized in line sputtering system for the economic large scale production of fTO films are presented. s-E-31 pressed ITO target was 90 wtt InzOs and 10 wtt Snoz. The following main process parameters were used. Soda lime glass: 1 mm Deposition ternperature: R.T. -300o C
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