Microwave plasma assisted sputtering

Latz, R.; Haranou, Takeshi; Ocker, B.; Suzuki, K.

doi:10.1016/s0022-3093(97)00295-0

Cited by 7 publications

(6 citation statements)

References 5 publications

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“…Notably, the ITO film grown on the glass substrate modified with −SH terminal SAM shows a predominant orientation of (222) crystal plane, while (440) crystal plane is also evident, albeit with a very low intensity peak. Similar crystallographic patterns were reported previously for microwave plasma-assisted sputtering of ITO films . In sharp contrast, ITO films grown on substrates with −NH 2 and −CH 3 terminal groups have no well-defined XRD peaks.…”

Section: Resultssupporting

confidence: 85%

Discriminate Crystallinities of Tin Doped Indium Oxide Films on Self-Assembled Monolayers Modified Glass Substrates

2010

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Tin doped indium oxide (ITO) films have generated tremendous research interest and received widespread applications in optoelectronic devices due to a good combination of desired optical and electrical properties. Their electrical properties vary depending on the crystallinity of the film. A good quality ITO film should have low resistivity, which can be achieved with highly crystalline films deposited at very high temperature. Thus, film quality is sensitive to the deposition conditions. Generally, low-temperature deposition of ITO results in poor quality films due to amorphous growth. In this study, we have demonstrated that crystallinity of the ITO films can be improved even at room temperature (RT) using self-assembled monolayers (SAMs) modified glass substrates. The present study demonstrates that SAM with -SH terminal group is necessary for the high-quality ITO growth, while SAMs with other terminal groups (-NH(2) and -CH(3)) generate ITO films with moderate crystallinity. Various properties of such films were investigated using X-ray diffraction, X-ray photoelectron depth profile, four-point probe, and Hall measurements. It is confirmed from such measurements that ITO film deposited on -SH terminated SAM substrate has excellent crystallinity, conductivity, and optical transmission.

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Section: Resultssupporting

confidence: 85%

Discriminate Crystallinities of Tin Doped Indium Oxide Films on Self-Assembled Monolayers Modified Glass Substrates

2010

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“…The crystallization temperatures (T c ) of amorphous ITO films have been reported to be 160-180°C [15,16]. In the case of sputtering method, it was reported that some ITO films deposited at room temperature showed polycrystalline structure [17]. Whereas, in case of e-beam (EB) evaporation, amorphous ITO films could be obtained at T s below the crystallization temperature [18,19].…”

Section: Resultsmentioning

confidence: 99%

Effects of substrate temperature on electrical and optical properties ITO films deposited by r.f. magnetron sputtering

Lee

2008

J Electroceram

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Indium tin oxide (ITO) films have been prepared by r.f. magnetron sputtering using powder target. X-ray diffraction analysis indicates that the deposited films were polycrystalline and retained a cubic bixbite structure. The ITO films deposited at low substrate temperature (T s ) exhibit a (411) preferred orientation but the films deposited at high T s prefer a (111) orientation. The substrate temperature was found to significantly affect the electrical properties. As the T s was increased, the conductivity of ITO films was improved due to thermally induced crystallization. The lowest resistivity (8.7×10 −4 Ω-cm) was obtained from ITO films deposited at 450°C. However, optical properties of the films were somewhat deteriorated. The infrared (IR) reflectance of the film increases with increasing the substrate temperature.Keywords ITO film . Sputtering . Powder target . Substrate temperature 2 Experimental ITO films were prepared by a commercial r.f. magnetron sputtering system. The chamber was pumped by a turbomolecular pump and the base pressure before deposition was about 1.3×10 −3 Pa. ITO powders with SnO 2 content of 10°wt% were used as targets after slightly compressing them into a cupper holder, 3 in. in diameter. The substrate J Electroceram (2009) 23:554-558

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“…This is the basic principle of electron cyclotron resonance (ECR). The electron cyclotron frequency (or gyro motion frequency) is controlled by the magnet to match the microwave frequency. − In these research, we set the magnitude of the magnet to 875 G, and frequency of microwave to 2.45 GHz. The ECR condition facilitates the electron and ion to absorb the microwave energy efficiently, thus inducing high-density plasma and high deposition rate even at low operation pressure.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…However, ultrahigh field-effect mobility and high-reliability are required for the industrial applications of high resolution, high frame rate and large area display. − By using the conventional sputter, it is difficult to deposit high-quality oxide semiconductor film. Therefore, to produce high-quality and high-performance ITZO films, we introduced the concept of sputter, that is, microwave-assisted sputter (MWA sputter) . , We confine high-density plasma with the induction of microwave into the DC magnetron sputter by using the electron cyclotron resonance (ECR) effect. The MWA sputtering method has the advantages of producing highly ionized plasma, managing working pressure and controlling reflected Ar bombardment energy.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, to produce high-quality and high-performance ITZO films, we introduced the concept of sputter, that is, microwave-assisted sputter (MWA sputter) . 15,16 We confine high-density plasma with the induction of microwave into the DC magnetron sputter by using the electron cyclotron resonance (ECR) effect. The MWA sputtering method has the advantages of producing highly ionized plasma, managing working pressure and controlling reflected Ar bombardment energy.…”

Section: Introductionmentioning

confidence: 99%

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Efficient Suppression of Defects and Charge Trapping in High Density In–Sn–Zn–O Thin Film Transistor Prepared using Microwave-Assisted Sputter

Goh

Ahn

Lee³

et al. 2017

ACS Appl. Mater. Interfaces

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Amorphous oxide semiconductor-based thin film transistors (TFTs) have been considered as excellent switching elements for driving active-matrix organic light-emitting diodes (AMOLED) owing to their high mobility and process compatibility. However, oxide semiconductors have inherent defects, causing fast transient charge trapping and device instability. For the next-generation displays such as flexible, wearable, or transparent displays, an active semiconductor layer with ultrahigh mobility and high reliability at low deposition temperature is required. Therefore, we introduced high density plasma microwave-assisted (MWA) sputtering method as a promising deposition tool for the formation of high density and high-performance oxide semiconductor films. In this paper, we present the effect of the MWA sputtering method on the defects and fast charge trapping in In-Sn-Zn-O (ITZO) TFTs using various AC device characterization methodologies including fast I-V, pulsed I-V, transient current, low frequency noise, and discharge current analysis. Using these methods, we were able to analyze the charge trapping mechanism and intrinsic electrical characteristics, and extract the subgap density of the states of oxide TFTs quantitatively. In comparison to conventional sputtered ITZO, high density plasma MWA-sputtered ITZO exhibits outstanding electrical performance, negligible charge trapping characteristics and low subgap density of states. High-density plasma MWA sputtering method has high deposition rate even at low working pressure and control the ion bombardment energy, resulting in forming low defect generation in ITZO and presenting high performance ITZO TFT. We expect the proposed high density plasma sputtering method to be applicable to a wide range of oxide semiconductor device applications.

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Microwave plasma assisted sputtering

Cited by 7 publications

References 5 publications

Discriminate Crystallinities of Tin Doped Indium Oxide Films on Self-Assembled Monolayers Modified Glass Substrates

Discriminate Crystallinities of Tin Doped Indium Oxide Films on Self-Assembled Monolayers Modified Glass Substrates

Effects of substrate temperature on electrical and optical properties ITO films deposited by r.f. magnetron sputtering

Efficient Suppression of Defects and Charge Trapping in High Density In–Sn–Zn–O Thin Film Transistor Prepared using Microwave-Assisted Sputter

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