Reactive alternating current magnetron sputtering of dielectric layers

Abstract

Articles you may be interested inHigh reflectivity dielectric mirror deposition by reactive magnetron sputtering J. Vac. Sci. Technol. A 10, 3305 (1992); 10.1116/1.577816Modeling reactive sputtering process in symmetrical planar direct current magnetron systems A comparison of SiO2 planarization layers by hollow cathode enhanced direct current reactive magnetron sputtering and radio frequency magnetron sputtering Reactively rf magnetron sputtered AlN films as gate dielectric Dielectric layers like A1 2 0 3 • Si0 2 , and Si)N4 have been produced by a reactive ac magnetron sputtering process, using a two cathode arrangement. Within a frequency range between 10 and 100 kHz, where the ions still completely follow the ac field, deposition rates comparable to the de case could be achieved. In contrast to dc sputtering above a certain frequency of some ten kHz no disturbing charges on dielectric parts of the target surface can build up, thus preventing the well-known problem of arcing. Above this frequency the probability of arcing decreases to zero, leading to a stable process. High deposition rates of about 40 A/s could be realized for the AI-and Si-based reactive processes. This was achieved by a control unit combining the discharge voltage and the reactive gas flow in order to stabilize the transition between the metallic and the dielectric sputter mode. In case of dynamic deposition a homogeneous film thickness distribution on a substrate area of 350X450 mm 2 of better than ±5% was obtained. An easy scale-up to bigger cathodes is expected due to the simple coupling of the ac power to the cathodes in this frequency range. The investigated dielectric layers are characterized by optical and mechanical measurements.

Nb2O5-SiO2 mixtures produced by reactive DC and RF magnetron sputtering

“…As with many other reactive oxide sputtering processes, deposition of Nb 2 O 5 is however often accompanied with problems, such as arcing, uncontrolled fast transition to fully poisoned target state, significant drop in deposition rate [10][11][12] and, as a result, deterioration of film properties. Arcing in reactive sputtering processes can be minimized by using medium frequency AC (40 -100 kHz) or pulsed-DC (20 -350 kHz) power [13,14]. Fast transition and the hysteresis effects present an opportunity and can be used beneficially by employing a fast feedback control of reactive gas (RG) supply.…”

The influence of deposition parameters on the structure and properties of magnetron-sputtered titania coatings

“…Typical applications include low emissivity and solar control films, anti-reflection coatings and narrow bandpass filters. Among the various methods available for the deposition of TiO 2 thin films including sol -gel processes [1], chemical vapor deposition [2,3], evaporation [4] and ion beamassisted processes [5], pulsed magnetron sputtering [6][7][8][9] is widely recognized as an enabling technology. There are, however, two issues which affect the use of pulsed magnetron sputtering for deposition of TiO 2 .…”

Pulsed-magnetron-sputtered low-temperature indium tin oxide films for flat-panel display applications

“…[10][11][12] However, the relative deposition rate decreases with increasing frequency. [10][11][12] However, the relative deposition rate decreases with increasing frequency.…”