Si micro-electro-mechanical device with GaN light emitting diode (LED) is monolithically fabricated. The GaN-LED layer was grown by molecular beam epitaxy on Si wafer and the basic properties of the LED were tested. The GaN/Si wafer was micromachined using deep reactive ion etching to fabricate Si electrostatic comb-drive actuator. A light distribution variable device with Si actuator was fabricated from the grown wafer. From those experiments, it is shown that the combination of the GaN crystal growth on Si wafer and the Si micromachining is valuable for a new kind of optical micro-systems.
We have attempted to synthesize the Bi-2212 phase of BiPbSr2−xBaxRECu2O8+δ (RE = Nd, Sm, Gd, Y, Yb) by the conventional solid-state reaction method. The completely Ba-substituted sample with x = 1 has been successfully synthesized only for Nd. As the ionic radius of RE decreases, the solubility limit of Ba decreases. It has been found that the substitution of Ba for Sr requires the expansion of both the Bi–O and RE layers as well as the synthesis in a reducing atmosphere to suppress the formation of BaBiO3-related phases. Unfortunately, the hole-doping to semiconducting BaPbBa2NdCu2O8+δ has not been successful.
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