Column-crystallized InGaN∕GaN quantum-well flower structure was deposited on pillared Si (111) substrate. Dotted GaN nuclei grew along the direction of the coming Ga and N atoms, forming arrays of InGaN∕GaN quantum-well flower structure. Raman spectra measurement demonstrated that these crystals were fully relaxed. Photoluminescence measurement showed a room temperature peak position of 556nm and two peak positions of 400 and 549nm at low temperature. Hg lamp excited photoluminescence demonstrated a clear fluorescence distribution from the low to the top part of the flower structure and much stronger emission compared with the quantum-well crystals on the flat Si substrate.

The variability in cell response to AC electric fields is selective enough to separate not only the cell types but also the activation states of similar cells. In this work, we use dielectrophoresis (DEP), which exploits the differences in the dielectric properties of cells, to separate nonviable and viable cells. A parallel-plate DEP device consisting of a bottom face with an array of micro-fabricated interdigitated electrodes and a top face with a plane electrode was proposed to facilitate the separation of cells by creating a nonuniform electric field throughout the flow channel. The operation and performance of the device were evaluated using live and dead yeast cells as model biological particles. Further, numerical simulations were conducted for the cell suspensions flowing in a channel with a nonuniform AC electric field, modeled on the basis of the equation of motion of particles, to characterize the separation efficiency by changing the frequency of applied AC voltage. Results demonstrated that dead cells traveling through the channel were focused onto a site around the minimum electric field gradient in the middle of the flow stream, while live cells were trapped on the bottom face. Cells were thus successfully separated under the appropriately tuned frequency of 1 MHz. Predictions showed good agreement with the observation. The proposed DEP device provides a new approach to, for instance, hematological analysis or the separation of different cancer cells for application in circulating tumor cell identification. Published by AIP Publishing.

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A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film was deposited on Si(111) substrate, with InN as the interlayer, by molecular beam epitaxy. The diameter of the column crystal is about 40 nm. Transmission electron microscopy images showed clear five-period well layers. Photoluminescence measurements demonstrated a wide emission wavelength from about 500 to 800 nm with the full width at half maximum of 107 nm at room temperature. An unusual photoluminescence peak position shift was observed from the optical measurement. The selected area electron diffraction image demonstrated the hexagonal wurtzite structure of the column crystal. A self-supported GaN-based active subwavelength grating was proposed, and the active subwavelength grating structure was fabricated from the InGaN/GaN quantum-well thin film by a Si micromachining process.

Nanocolumn InGaN/GaN quantum-well crystals were deposited on pillared and flat Si substrates. A unique flower structure was synthesized on the Si pillars. Vertically aligned nanocolumn crystals were uniformly deposited on the flat Si substrate. Raman spectra measurement shows the crystals are fully relaxed. Photoluminescence measurement indicates much stronger photoluminescence excited from the flower structure than that from the crystals on the flat Si substrate. Reflectivity measurement demonstrates much lower reflectivity of the flower structure than that of the crystals on the flat substrate. Laser scanning confocal microscopy measurement indicates clear vertical photoluminescence distributions of the flower structure. Optical microscopy images show that there is a horizontal photoluminescence distribution on the pillared Si substrate and the quantum-well flower structure emits much brighter light than the crystals on the flat Si substrate. The flower structure improves the surface geometrical structure and enhances the extraction efficiency much more than the crystals on the flat Si substrate.