A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining

Abstract

A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film was deposited on Si(111) substrate, with InN as the interlayer, by molecular beam epitaxy. The diameter of the column crystal is about 40 nm. Transmission electron microscopy images showed clear five-period well layers. Photoluminescence measurements demonstrated a wide emission wavelength from about 500 to 800 nm with the full width at half maximum of 107 nm at room temperature. An unusual photoluminescence peak position shift was observed from the optical measurement. The selected area electron diffraction image demonstrated the hexagonal wurtzite structure of the column crystal. A self-supported GaN-based active subwavelength grating was proposed, and the active subwavelength grating structure was fabricated from the InGaN/GaN quantum-well thin film by a Si micromachining process.

Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD

“…The EDX line scanning results show that the indium contents in the upper and lower parts of the InGaN layer of DH200 are lower, whereas those in the intermediate layer is very high. The intermediate layer indicates the existence of indium droplets [63-65]. High-concentration indium exists at the intermediate layer as indium droplets, instead at the InGaN layer as a uniform thin film.…”

Growth of GaN LED Structure on Si Substrate by MBE and Monolithic Fabrication of GaN LED Cooling System

“…It shows that GaN crystal grows continuously on the template layer without forming the column structure by MBE. In our previous research, when we fabricated GaN crystal on a Si(111) substrate by MBE, GaN nano-column crystal was formed [6]. On the other hand, in this experiment, a uniformly grown GaN crystalline layer is obtained as a result of the GaN template layer grown by MOCVD and the introduced buffer layer (100-nm-thick, 12-period AlN/GaN multiple layer).…”

GaN-LED grown on Si substrate by MBE/MOCVD and monolithic fabrication of a light distribution variable device

“…When we previously fabricated GaN crystal directly on a Si substrate by MBE, GaN nanocolumn crystal was formed because of the different lattice constant between GaN and Si [5]. In this experiment, however, flat crystalline surface was obtained due to the template substrate.…”

“…Therefore, the monolithic fabrication of GaN-based light source on Si substrate is a prospective technology for the optical MEMS. We have reported some progresses toward the GaN/Si hybrid optical MEMS [5][6][7].…”