High-efficiency light-emitting column-crystallized InGaN∕GaN quantum-well flower structure on micropillared Si substrate

Hu, Fangren; Ochi, Kengo; Zhao, Yue; Hane, Kazuhiro

doi:10.1063/1.2364839

Cited by 17 publications

(14 citation statements)

References 14 publications

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“…Although the crystal was not continuous, the nano-column GaN crystals grown by MBE were shown to have a good crystalline quality and an excellent optical property (Kikuchi et al 2004;Hu et al 2006). In the recent researches, the high efficient LED and laser oscillation were reported.…”

Section: Gan Crystalline Growth On Si Wafermentioning

confidence: 98%

Monolithic micro-fabrication of Si micro-electro-mechanical structure with GaN light emitting diode

et al. 2010

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Si micro-electro-mechanical device with GaN light emitting diode (LED) is monolithically fabricated. The GaN-LED layer was grown by molecular beam epitaxy on Si wafer and the basic properties of the LED were tested. The GaN/Si wafer was micromachined using deep reactive ion etching to fabricate Si electrostatic comb-drive actuator. A light distribution variable device with Si actuator was fabricated from the grown wafer. From those experiments, it is shown that the combination of the GaN crystal growth on Si wafer and the Si micromachining is valuable for a new kind of optical micro-systems.

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Section: Gan Crystalline Growth On Si Wafermentioning

confidence: 98%

Monolithic micro-fabrication of Si micro-electro-mechanical structure with GaN light emitting diode

et al. 2010

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“…We tested several buffer layers for the growth of GaN crystal on Si (111) substrate such as low temperature AlN/GaN layers using MBE. The crystals were likely to become nano-columns of the diameter around 150 nm (Hu et al 2006). Although the nano-column crystals had several unique properties and we successfully fabricated the nanocolumn LED on Si substrate (Ito et al 2010), the special technique was needed for filling the spaces between the nano-columns to fabricate the electrode on p-GaN layer.…”

Section: Gan Crystal Growth On Si Substrate and Led Fabricationmentioning

confidence: 99%

Fabrication of GaN light emitting diode membrane on Si substrate for MEMS applications

Wakui

Sameshima

et al. 2010

Microsyst Technol

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GaN membrane structures are fabricated for micro-electro-mechanical systems (MEMS). The combination of GaN and Si semiconductors is promising for future MEMS. However, due to the different material properties, the fabrication of MEMS using GaN semiconductor is still limited. Here, a simple membrane of GaN semiconductor deposited on Si substrate was investigated. The GaN crystal was grown by molecular beam epitaxy and metal organic chemical vapor deposition. The basic properties of the fabricated GaN light emitting diode (LED) were investigated. Etching the Si substrate from the backside, a freestanding GaN LED membrane was fabricated which can be useful for micro total analysis system. From those experimental results, it was shown that the GaN LED membrane was feasible for MEMS applications.

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“…A RF nitrogen plasma source and solid Ga and In source were used as the source materials. After several experiments, it was found that nanocolumn QW crystals on Si have better quality and the photoluminescence (PL) is more efficient, compared with the flat QW crystal on Si [4][5][6][7]. In order to decrease the defects, a low-temperature buffer layer (GaN, nitrified Ga dots or InN interlayer) was first deposited on the Si substrate, and then it was followed by the deposition of the high-temperature GaN.…”

Section: Introductionmentioning

confidence: 99%

GaN‐Si‐MEMS structure fabricated from nano‐column GaN quantum well crystal grown on Si substrate

Ito

Zhao

et al. 2008

Phys. Status Solidi (c)

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Nanocolumn‐crystallized InGaN/GaN quantum well crystals were deposited on Si (111) substrate. Photoluminescence measurement demonstrated a wide emission wavelength from about 400 nm to 700 nm. We propose a new light source device combined with Micro‐Electro‐Mechanical Systems (MEMS). The proposed device is monolithically composed of the GaN light source structures and Si MEMS. The direction of the light beam emitted from an array of the light source can be changed by a MEMS beam steering mechanism. A micro‐stage with comb actuators was fabricated from the Si substrate. The InGaN/GaN quantum well film is patterned on the micro‐stage. Basic researches on the growth of GaN crystals on Si substrate were also carried out. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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High-efficiency light-emitting column-crystallized InGaN∕GaN quantum-well flower structure on micropillared Si substrate

Cited by 17 publications

References 14 publications

Monolithic micro-fabrication of Si micro-electro-mechanical structure with GaN light emitting diode

Monolithic micro-fabrication of Si micro-electro-mechanical structure with GaN light emitting diode

Fabrication of GaN light emitting diode membrane on Si substrate for MEMS applications

GaN‐Si‐MEMS structure fabricated from nano‐column GaN quantum well crystal grown on Si substrate

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