Growth of GaN Quantum Well Film on Si Substrate and Its Application to a GaN-Si Hybrid Lightning Device

Hu, Fangren; Ito, R.; Zhao, Yue; Kanamori, Y.; Hane, Kazuhiro

doi:10.1109/omems.2006.1708248

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2009

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“…Therefore, the monolithic fabrication of GaN-based light source on Si substrate is a prospective technology for the optical MEMS. We have reported some progresses toward the GaN/Si hybrid optical MEMS [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

GaN-LED grown on Si substrate by MBE/MOCVD and monolithic fabrication of a light distribution variable device

Wakui

Ito

Sameshima

et al. 2009

TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference

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Monolithic integration of GaN-based semiconductor with Si MEMS is demonstrated from a GaN/Si wafer, in which GaN crystal is grown by molecular beam epitaxy (MBE). A Light emitting diode is fabricated on the grown GaN crystal and the blue electro-luminescence is obtained. The GaN crystal property of is improved by using a template grown by metal organic chemical vapor deposition (MOCVD). A light distribution variable device with Si comb actuator is monolithically fabricated.

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Section: Introductionmentioning

confidence: 99%