T~e l~fetimes of excess carriers in phosphorus-doped, float-zoned silicon were measured before and after lrradlatI~n by cobal~-60. gamma rays. Recombination in the samples prior to irradiation was dominated by a. donor-like recombmatIOn center located 0.13 eV above the valence band. After irradiation, two recombination centers were found in the samples: one located at E c-O.17 eV and the other at Ec-O.40 eV. The center at eV can be identified with the oxygen-vacancy defect (Si-A centel), but no positive identification of the E c-O.40 eV center can be made. By assuming that the Ec-0.40 eV center is the phosphorus-vacancy complex, the hole capture cross section of the center was estimated as 9X 10-14 em'.
High-resistivity silicon substrates (HRS, NB<1014cm−3) are commonly used, especially in optoelectronic integrated circuits. However, standard metal oxide semiconductor (MOS) characterization methods fail to predict correctly the dopant concentration and lifetime. This is due to the high resistance in series with the MOS capacitor, which causes an erroneous capacitance measurement at high frequency. To overcome this restriction, a different characterization method is proposed, using the electronic transport property of silicon-rich oxide (SRO) films, with aluminum/silicon-rich oxide (Al/SRO/Si) devices and using capacitance-voltage (C-V) and current-voltage (I-V) characteristics, the dopant concentration and lifetime can be estimated with these method. In addition, using low/high-frequency C-V measurements in MOS structure on HRS can be used to determine the dopant concentration. In this work, low-resistivity silicon and HRS substrates are characterized. The results for both type of substrates and for the different methods are compared. It is shown that the results are similar and any of these methods produce reliable results, but the Al/SRO/Si structure has the advantage that the generation lifetime is easily obtained.
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