The electrical properties of dislocations in silicon—II

Glaenzer, R.; Jordan, A. G.

doi:10.1016/0038-1101(69)90007-0

Cited by 21 publications

(3 citation statements)

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“…These results may be explained partly in terms of Read's theory modified to include the scattering of carriers. The scattering results in a reduction of mobility as shown experimentally by Glaenzer and Jordan (10). Their results, however, are not directly applicable here because the dislocations in the silicon samples used in their work were intentionally aligned in one direction, whereas the dislocations in the silicon wafers used in the present work were not oriented in any particular direction.…”

Section: Application Of the Technique To Study Imperfectionsmentioning

confidence: 60%

Observations on Imperfections in Silicon Material Using the Spreading Resistance Probe

Gupta¹,

Chan²,

Wang

1970

J. Electrochem. Soc.

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Section: Application Of the Technique To Study Imperfectionsmentioning

confidence: 60%

Observations on Imperfections in Silicon Material Using the Spreading Resistance Probe

Gupta¹,

Chan²,

Wang

1970

J. Electrochem. Soc.

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“…Similar results were seen in n‐ and p‐type Si containing parallel arrays of edge dislocations. [ 230 ] At 750 °C, using plastic deformation, dislocation densities of ≈10 6 –10 7 per cm 2 were introduced in the samples. The electrical conductivity was observed to be highly anisotropic for both parallel and perpendicular measurements, indicating space charge cylinders surround dislocation in p‐ and n‐type Si.…”

Section: Introductionmentioning

confidence: 99%

Understanding Nanoscale Plasticity by Quantitative In Situ Conductive Nanoindentation

2021

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Electronic materials such as semiconductors, piezo‐ and ferroelectrics, and metal oxides are primary constituents in sensing, actuation, nanoelectronics, memory, and energy systems. Although significant progress is evident in understanding the mechanical and electrical properties independently using conventional techniques, simultaneous and quantitative electromechanical characterization at the nanoscale using in situ techniques is scarce. It is essential because coupling/linking electrical signal to the nanoscale plasticity provides vital information regarding the real‐time electromechanical behavior of materials, which is crucial for developing miniaturized smarter technologies. With the advent of conductive nanoindentation, researchers have been able to get valuable insights into the nanoscale plasticity (otherwise not possible by conventional means) in a wide variety of bulk and small‐volume materials, quantify the electromechanical properties, understand the dielectric breakdown phenomenon and the nature of electrical contacts in thin films, etc., by continuously monitoring the real‐time electrical signal changes during any point on the indentation load–hold–unload cycle. This comprehensive Review covers probing the electromechanical behavior of materials using in situ conductive nanoindentation, data analysis methods, the validity of the models and limitations, and electronic conduction mechanisms at the nanocontacts, quantification of resistive components, applications, progress, and existing issues, and provides a futuristic outlook.

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“…Glaenzer [11] showed that there was also a positive dislocation charge in a p-doped silicon, so donor states dominate the band gap bottom half. The dislocation cores are mainly reconstructed, and the activity depends on the dissociation, the reconstruction type and the contamination.…”

mentioning

confidence: 99%

Trap and Dislocation Electrical Activity in a Reversely Biased P-N Junction in Silicon

Leroy¹

1995

J. Phys. III France

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The electrical properties of dislocations in silicon—II

Cited by 21 publications

References 11 publications

Observations on Imperfections in Silicon Material Using the Spreading Resistance Probe

Observations on Imperfections in Silicon Material Using the Spreading Resistance Probe

Understanding Nanoscale Plasticity by Quantitative In Situ Conductive Nanoindentation

Trap and Dislocation Electrical Activity in a Reversely Biased P-N Junction in Silicon

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