Spreading‐resistance measurements at 25 μm intervals with a steel probe on n‐type silicon free of dislocations and vacancy clusters show on a microscale resistivity variations which can be correlated to the height variations in a striated pattern formed by preferential etching (growth striations). These height variations are measured both by interference contrast microscopy and a traversing stylus instrument. It turns out that the growth striations delineate regions of maximum resistivity gradients.