Recombination in Gamma-Irradiated Silicon

Glaenzer, R.; Wolf, Clarence J.

doi:10.1063/1.1714449

Cited by 16 publications

(3 citation statements)

References 16 publications

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“…Q = 10 to 1000 Qcm grown by the Czochralski (pulled) and vacuuxn floating-zone techniques were used. The samples 13 x 3 x 2 mm3 in size were irradiated (Tirr 30 "C) with y-rays of 6oCo (ye) or y-rays of the bremsstrahlung spectrum of electrons with energy E, = 100 MeV (yB).…”

Section: Methodsmentioning

confidence: 99%

Charge-carrier recombination in silicon irradiated with γ-rays of different energies

Kolkovskii

Лугаков

Shusha

1984

Phys. Stat. Sol. (a)

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Comparative experiments are made to study the nonequilibrium charge‐carrier recombination in silicon irradiated with γ‐rays of 50Co and of the bremsstrahlung spectrum of electrons with maximum energy 100 MeV. n‐ and p‐Si crystals with ϱ = 10 to 1000 Ωcm grown by Czochralski and vacuum float‐zone techniques are used. The temperature and injection dependences of nonequilibrium charge‐carrier lifetimes measured by a phase method are analyzed. It is found that when irradiating with γ‐rays of 60Co a great number of recombination centers are produced which are mainly complexes of irradiation‐generated vacancies and interstitials with dopants (phosphorus, boron) and technological (oxygen, carbon) impurities. As distinct from this, the dominant recombination centres in silicon irradiated with γ‐rays of the bremsstrahlung spectrum are divacancies involved in defect clusters, surrounded by the potential barrier Ψ for the majority charge carriers. The parameters of recombination centres (energy level spectrum, annealing temperatures, charge‐carrier capture coefficients) in crystals studied under γ‐irradiation are determined. The peculiarities in the charge‐carrier recombination processes due to the localization of recombination centres in defect clusters generated by photonuclear reaction products are discussed.

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Section: Methodsmentioning

confidence: 99%

Charge-carrier recombination in silicon irradiated with γ-rays of different energies

Kolkovskii

Лугаков

Shusha

1984

Phys. Stat. Sol. (a)

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“…Powders possess a lot of defects on the surface that trap charge carriers, and it has been widely believed that these defects work as electron–hole recombination centers. In fact, there are numerous reports that the lifetime of photogenerated charge carriers becomes shorter on introducing defects into a crystal. − However, recently it was reported that photocarriers in defect-rich SrTiO 3 (STO) powder had longer lifetimes than those in defect-free SC STO, and defects can enhance the photocatalytic activities . These reports seem to contradict each other and imply that defects have properties of both accelerating and decelerating recombination.…”

Section: Introductionmentioning

confidence: 99%

Defect-Induced Acceleration and Deceleration of Photocarrier Recombination in SrTiO₃ Powders

Kato

Yamakata

2020

J. Phys. Chem. C

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Defects in powders play key roles in photocatalysis since they sometimes accelerate but other times prevent the recombination of photocarriers. However, how to differentiate the roles, as well as their actual effects, is still unclear. Here, we found that defects have dual properties: initially they accelerate recombination, but later they prevent it. These two contradictory properties are differentiated by whether electrons and holes are trapped in the vicinity or far away from each other. Just after photoirradiation, defects prevent carrier diffusion to keep them closer, resulting in accelerating recombination. However, once the carriers can escape from the initial trapping, they can spread and be trapped far away. These trapped carriers have to travel long distances by repeatedly hopping and tunneling; hence, the carrier lifetime becomes longer. The fate of carriers is determined by how they escape the initial trapping by using excess energy after photoexcitation; i.e., control of this process is the key to improving the photocatalytic activity.

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“…i A-centre produced by joining of oxygen was found 0.17 eV below the conduction band (3). The impurity compensated depletion layer of the drift detector contains lithium atoms which a r e on interstitials.…”

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confidence: 93%

Radiation damage by thermal neutrons in Si(Li) nuclear radiation detectors

Burmeister

1972

Phys. Stat. Sol. (a)

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Recombination in Gamma-Irradiated Silicon

Cited by 16 publications

References 16 publications

Charge-carrier recombination in silicon irradiated with γ-rays of different energies

Charge-carrier recombination in silicon irradiated with γ-rays of different energies

Defect-Induced Acceleration and Deceleration of Photocarrier Recombination in SrTiO₃ Powders

Radiation damage by thermal neutrons in Si(Li) nuclear radiation detectors

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Recombination in Gamma-Irradiated Silicon

Cited by 16 publications

References 16 publications

Charge-carrier recombination in silicon irradiated with γ-rays of different energies

Charge-carrier recombination in silicon irradiated with γ-rays of different energies

Defect-Induced Acceleration and Deceleration of Photocarrier Recombination in SrTiO3 Powders

Radiation damage by thermal neutrons in Si(Li) nuclear radiation detectors

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Product

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Defect-Induced Acceleration and Deceleration of Photocarrier Recombination in SrTiO₃ Powders