Evidence is provided indicating that a nitridation reaction occurs at a silicon–silicon dioxide interface during high-temperature annealing in nitrogen. The factors affecting nitrogen-reaction kinetics are similar to those affecting oxidation of silicon with dry oxygen. The nitridation reaction is significantly slower than the oxidation reaction, and trace amounts of oxidants can effectively compete with nitrogen for silicon reaction sites.

Avalanche injection of hot electrons into the insulator of an MOS capacitor has been used to study electron trapping in SiO2. Oxides formed by thermal oxidation in dry O~, 02 -5 HC1, 02 -5 I-I20, steam, and chemical vapor-deposited (CVD) SiO2 were subjected to avalanche charging. Pure, dry thermal SiO2 was found to trap up to 2.6 X 10 TM e/cm 2. The trapping efficiency of SiO~ varied by three orders of magnitude, depending on forming and annealing conditions.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 129.115.103.99 Downloaded on 2015-06-15 to IP ABSTRACTThe electrical conductivity of fl-PbF2 in single crystal and pressed pellets was measured by a-c bridge techniques. Aliovalent cation fluoride doping was used to elucidate the conductivity mechanism in the extrinsic region, 25~176Conduction was shown to be via fluoride ion vacancies. Potassium fluoride dopant increased the ionic conductivity of ~-PbFe from 5 • 10 -7 to 1 • 10 -8 ohm-~-cm -J at room temperature. However, galvanic cells utilizing the higher conductivity of the doped material failed due to formation of a passivation layer of pure ~-PbF2 at the anode/electrolyte interface. * Electrochemical Society Active Member.

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The electrical properties of thin thermal SiO2 films were studied as a function of high-temperature, postoxidation annealing in various ambients. Surface charge measurements were made of SiO2–Si structures after annealing for different time intervals in a N2 ambient at temperatures ?925°C. The oxidation-induced fixed oxide charge rapidly decreased. A more gradually increasing charge was observed that is primarily attributed to fast surface states.

The Murphy-Good tunneling theory, modified with a Franz-type two-band dispersion relation, accurately represents emission of electrons from metals into Si0 2 using parameters that are invariant with temperature and that agree with independent measurements. Parameters related to properties of the Si0 2 do not change when different metal electrodes are used. Deviations of the measured I-V characteristic from the model calculation which occur at low field can be explained in terms of interfacial inhomogeneities in the effective barrier height. For thin dry Si0 2 grown on boron-dope silicon, the effective size of the inhomogeneities increases with decreasing oxidation temperature.