The Effects of Processing on Hot Electron Trapping in SiO2

Gdula, R. A.

doi:10.1149/1.2132762

Cited by 90 publications

(19 citation statements)

References 17 publications

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“…In common with other workers [13,47,48], the sensitivity of our oxide to radiation is very dependent on the manner in IEEPROC, Vol. 128, Pt.…”

Section: Fig 6 Cumulative Shift In the Flat-band Voltage Of An Mos Csupporting

confidence: 79%

“…It is seen that a systematic decrease in AV FB occurs on moving from an unannealed sample to one which has undergone the higher temperature postoxidation and postmetal anneals. It is obvious, therefore, that correct annealing is required to reduce the sensitivity of SiO 2 to electron radiation and much work has already been carried out [47,48] investigating not only the changes in the hole traps but also in the electron traps.…”

Section: Fig 6 Cumulative Shift In the Flat-band Voltage Of An Mos Cmentioning

confidence: 99%

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Electron-beam-induced conductivity and related processes in insulating films

Taylor¹

1981

IEE Proc. A Phys. Sci. Meas. Instrum. Manage. Educ. Rev. UK

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The theoretical model for electron-beam-induced conductivity in thin insulating films is reviewed and its application to gain measurements in several different insulating materials is discussed. The ideas incorporated in the model suggest a technique for investigating trapping levels in insulators, using the electron beam as a means of populating the traps. It is suggested that, in addition to determining the trap eneigy, it may be possible to investigate the spatial distribution of the traps. Electron-beam-radiation effects in SiO 2 are briefly commented upon and the dependence of A Vp^, the shift in flat-band voltage of MOS capacitors, on beam energy is discussed in terms of the gain model. Finally consideration is given to the problem of observing voltage contrast from the passivated devices in a scanning electron microscope.

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“…In common with other workers [13,47,48], the sensitivity of our oxide to radiation is very dependent on the manner in IEEPROC, Vol. 128, Pt.…”

Section: Fig 6 Cumulative Shift In the Flat-band Voltage Of An Mos Csupporting

confidence: 79%

Section: Fig 6 Cumulative Shift In the Flat-band Voltage Of An Mos Cmentioning

confidence: 99%

Electron-beam-induced conductivity and related processes in insulating films

Taylor¹

1981

IEE Proc. A Phys. Sci. Meas. Instrum. Manage. Educ. Rev. UK

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“…The thermally grown SiO2 films currently being produced present several problems if they are incorporated in devices with reduced dimensions. These problems include hot electron effects (2)(3)(4), high field instabilities (5)(6)(7)(8), slow trapping (9,10), and radiation damage (11,12).…”

mentioning

confidence: 99%

Effect of Thermally Nitrided SiO2 (Nitroxide) on MOS Characteristics

Ito

Nakamura

Ishikawa

1982

J. Electrochem. Soc.

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Thermal nitridation of SiO2 in ammonia gas at elevated temperatures has been found to be useful for forming reliable thin gate insulators. Interfacial characteristics of MOS diodes with thermally nitrided SiO~ (nitroxide) films are significantly influenced by the nitridation conditions. At around 900~ hydrogen gas produced by the dissociation of ammonia gas deteriorates the quality of the starting SiO2 film, resulting in a negative shift of flatband voltages. Nitridation above 1100~ provides excellent properties for MOS diodes. The high field instability, which occurs just prior to dielectric breakdown, is avoided. A surface state density of lower than 1010 cm -2 eV -I is obtained at the Si midgap and the insulator charge becomes negligible. A strong barrier against contamination is formed on the SiO2 film. The mobile ion density of MOS diodes is reduced to the negligible range even if sodiumcontaminated gates are used. These features are attributable to not only the surface nitrided region of the nitroxide film but also the improved structure at the Si/SiO2 interface through the nitridation process.

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“…The socalled "flatband voltage turnaround" is evident in the dry oxide at a fluence of 2 x I0 ~8 cm -2, and in the wet oxide at 0.25 x I'0 '8 cm -~. A pronounced turnaround effect has also been associated with water contamination (24,26). As discussed in the Electron trapping analysis section, the flatband voltage turnaround is due to the buildup of anomalous positive charge at the Si-SiO2 interface, and was modeled by a second trap density and capture cross section.…”

Section: Resultsmentioning

confidence: 99%

Electrical Properties of Silicon Dioxide Films Fabricated at 700°C: III . High Pressure Thermal Oxidation

Trombetta

Zeto

Feigl

et al. 1985

J. Electrochem. Soc.

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High quality thermal oxides of silicon have been fabricated on silicon substrates over the oxidation temperature range 635~176 Dry, high pressure oxidation (DRYPOX) was used to grow oxides at temperatures below 1000~ The high pressure range investigated was 2-500 arm. Standard capacitance-voltage techniques have been used to characterize these oxides in terms of oxide fixed change (Q~) and interface trap densities (Di,). Additionally, avalanche injection of both electrons and holes has been used to evaluate the charge trapping properties of these films. The electron trapping properties of 685~ high pressure oxides were compared with "conventional" 1000~ oxides fabricated at 1 arm and with oxides fabricated using low pressure chemical vapor deposition (LPCVD) at 730~ The results of these experiments were as fellows: (i) basic electrical properties of high pressure oxides, as well as hole and electron trapping behavior in these oxides, were similar to those of 1000~ conventional oxides; (it) hole trap densities exhibited a broad minimum at an oxidation temperature between 800 ~ and 900~ and (iii) electron trapping behavior in 685~ DRYPOX oxides was markedly superior to that in 730~ LPCVD oxides. The LPCVD oxide required an anneal at 1000~ to produce electron trapping characteristics comparable to those of DRYPOX samples processed entirely at temperatures below 700~

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The Effects of Processing on Hot Electron Trapping in SiO2

Cited by 90 publications

References 17 publications

Electron-beam-induced conductivity and related processes in insulating films

Electron-beam-induced conductivity and related processes in insulating films

Effect of Thermally Nitrided SiO2 (Nitroxide) on MOS Characteristics

Electrical Properties of Silicon Dioxide Films Fabricated at 700°C: III . High Pressure Thermal Oxidation

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