Generation and relaxation phenomena of positive charge and interface trap in a metaloxidesemiconductor structurePositive charge and interface state generation in a thin gate oxide (30 nm) metaloxidesemiconductor capacitor J. Appl. Phys. 75, 1592 (1994; 10.1063/1.356396
Interface and bulk trap generation in metaloxidesemiconductor capacitorsThis work examines the electrical behavior of metal-oxide-semiconductor capacitors in which positive charge has been generated in the silicon dioxide layer using either avalanche hole injection, avalanche electron injection, or Fowler-Nordheim Tunneling injection. It is concluded on the basis of flatband voltage measurements made as a function of time following charge injection that two distinct species of positive charge are generated in the oxide layer, depending on the nature of charge generation. In particular, avalanche hole injection results in the generation of trapped holes, while avalanche electron injection and Fowler-Nordheim Tunneling result in so-called "slow-states'* or anomalous positive charge centers. The electrical behavior of these two species is discussed. In addition, interface trap density measurements following avalanche hole injection show that both a background level of interface traps and a peak at approximately 0.8 eV above the valence band edge build with time following injection. Further, the dependence of the interface trap density on injection fluence and time supports a model in which a neutral species is released from the bulk of the oxide during hole injection and subsequently generates an interface defect.
Very marked differences in the metastable persistence of coesite and stishovite have been demonstrated; the former possibly persists indefinitely below 1000 degrees C at 1 atmosphere "dry," and the latter completely decomposes in minutes above 500 degrees to 600 degrees C to an amorphous or short range order phase. Quartz was grown (metastably) at temperatures well above its stability field from both coesite and stishovite, possibly by way of a short range order phase. The absence of stishovite in meteor-impact craters cannot be taken as evidence that it was not formed. If it has "reversed" in normal natural environments the product would almost certainly be a short range order phase or derivative.
Dry oxygen pressure at 500 atm is used to grow
SiO2
films 103 nm thick on silicon at 800°C. The residual film stress, chemical etch rate, refractive index, and density of the pressure‐oxide films is measured and compared with measurements of thermal oxide films prepared at 1 atm dry oxygen pressure. The high pressure/low temperature films exhibited higher refractive indexes, slower chemical etch rates, and higher measured densities compared to 1 atm thermal oxides prepared at 1000°C. These results are attributed to the lower oxidation temperature rather than the higher oxidation pressure of the pressure‐oxide films. It is concluded that the formation of higher density
SiO2
films is a specific result of low temperature processing. The use of high pressure oxidation provides a convenient technique to prepare the low temperature high density
SiO2
films of sufficient thickness for further study.
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