Residual Stress, Chemical Etch Rate, Refractive Index, and Density Measurements on SiO2 Films Prepared Using High Pressure Oxygen

Irene, E. A.; Dong, D. W.; Zeto, Robert J.

doi:10.1149/1.2129677

Cited by 66 publications

(24 citation statements)

References 8 publications

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“…The applicability of this model is restricted to onedimensional planar oxidation and is not completely suitable for the oxidation of a nonplanar or shaped silicon surface, [7][8][9][10][11]16 even in the microscopic observation of onedimensional planar oxidation. [17][18][19][20] Because the volume of a molecule of SiO 2 is about 2.3 times that of a silicon atom, 11,13,21 silicon oxidation is accompanied by a large increase in volume, thus large mechanical stress would be generated during oxidation. If the volume expansion only takes place normal to the silicon surface, no stress will be generated along the planar direction.…”

Section: Theoretic Models For Silicon Thermal Oxidationmentioning

confidence: 99%

Stress effect on the kinetics of silicon thermal oxidation

Yen

Hwu

2001

Journal of Applied Physics

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Oxidation of silicon wafers under external mechanical stress was studied in this work. From the oxide thickness profile measured by an automatic-scanning ellipsometer, it was found that the oxidation kinetics of silicon were significantly affected by mechanical stress. There are two distinct features of oxide thickness distribution corresponding to short and long times. By comparing the kinetic constants taken from experiments and the simulated stress distribution on the silicon wafer, we can possibly explain the two features of oxide thickness distribution: the initial rate constant is deformation dependent and the parabolic rate constant is stress dependent. The observed stress-dependent oxidation rates are important in the study of thin gate oxide reliability.

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Section: Theoretic Models For Silicon Thermal Oxidationmentioning

confidence: 99%

Stress effect on the kinetics of silicon thermal oxidation

Yen

Hwu

2001

Journal of Applied Physics

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“…At temperatures below 1000-C the oxidation rate may be further influenced by intrinsic oxide stress (10,19). The presence of an intrinsic stress having a magnitude on the order of 100 dynes/cma at oxidation temperatures below approximately 1000oC is well established (20)(21)(22)(23)(24).…”

Section: Introductionmentioning

confidence: 98%

The Effect of Surface Orientation on Silicon Oxidation Kinetics

Lewis

Irene

1987

J. Electrochem. Soc.

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The rate of thermal oxidation of silicon is orientation dependent indicating that the surface orientation is an important parameter in the kinetic mechanism. However, it has not been clearly established which properties of the silicon surface control the oxidation rate. This study uses five silicon surface orientations to investigate the effect of the density of silicon atoms on planes parallel to the surface and the effect of intrinisic oxide stress on the oxidation rates. At temperatures of 700 ~ 1000 ~ and 1100~ the initial order of the rates is (110) > ( 111) > ( 311) > ( 511) > ( 100). The crossover in rate to (111) > ( 110) was observed at 700 ~ and 1000~ but not at 1100~ A qualitative correlation is obtained between the order of the initial rates and the density of atoms on the five planes. Stress effects do not appear to be dominant in the thickness regime before the rates on the (110) and (111) orientations crossover, but the ll00~ results suggest that the crossover may be related to the development of intrinsic oxide stress at lower temperatures. A revised explanation of the crossover on the (110) and ( 111) orientations based on a stress-related decrease in the transport of oxidant to the interface is proposed.

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“…The refractive index of the oxide film is mainly the function of its composition and density. [23][24][25][26] For the as-grown anodic oxide, it is measured to be 1.47, which is slightly greater than that of the films deposited by thermal oxidation (1.462). 27 A higher refractive index might be due to the high contents of silicon (or oxygen deficiency) in the as-grown oxide films.…”

Section: Resultsmentioning

confidence: 84%

Synthesis of Anodic Oxide Thin Films on Si{100} Wafers and Their Characterization in TMAH for MEMS

Ashok

Pal

2014

ECS J. Solid State Sci. Technol.

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Silicon dioxide thin films are most widely used for different applications in microelectromechanical system (MEMS) fabrication such as etch mask, structural and sacrificial layers. Anodic oxidation method offers several advantages over other techniques, such as room temperature deposition, low cost, simple experiment setup, etc. In the present work, anodic oxidation of silicon is employed to grow oxide thin films at wafer-scale at room temperature. As-grown oxide films are characterized using ellipsometry, scanning electron microscope (SEM), atomic force microscopy (AFM), Fourier transform infrared (FTIR) spectroscopy, optical microscope and 3D measuring laser microscope. Thickness uniformity and refractive index are measured using ellipsometry. FTIR spectra are used to conform the absence of hydroxyl and water absorption in the films. In order to exploit the application of anodic oxide in MEMS, the etch rates and the corner undercutting are studied in different concentration TMAH solutions at various temperatures. The as-grown oxide thin films with a thickness of about 155 nm are successfully demonstrated for the realization of various shapes freestanding MEMS structures such as rectangular cantilever beams, diaphragms, etc. using TMAH solution. Furthermore, as-grown oxide is used as mask to fabricate cavities with different shape and sizes in silicon substrate using wet anisotropic etching.

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Residual Stress, Chemical Etch Rate, Refractive Index, and Density Measurements on SiO2 Films Prepared Using High Pressure Oxygen

Cited by 66 publications

References 8 publications

Stress effect on the kinetics of silicon thermal oxidation

Stress effect on the kinetics of silicon thermal oxidation

The Effect of Surface Orientation on Silicon Oxidation Kinetics

Synthesis of Anodic Oxide Thin Films on Si{100} Wafers and Their Characterization in TMAH for MEMS

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