Electron tunneling at Al-SiO2 interfaces

Abstract

The Murphy-Good tunneling theory, modified with a Franz-type two-band dispersion relation, accurately represents emission of electrons from metals into Si0 2 using parameters that are invariant with temperature and that agree with independent measurements. Parameters related to properties of the Si0 2 do not change when different metal electrodes are used. Deviations of the measured I-V characteristic from the model calculation which occur at low field can be explained in terms of interfacial inhomogeneities in the effective barrier height. For thin dry Si0 2 grown on boron-dope silicon, the effective size of the inhomogeneities increases with decreasing oxidation temperature.

Toward a Unified Theory Correlating Electronic, Thermodynamic, and Mechanical Properties at Defective Al/SiO2 Nanodevice Interfaces: An Application to Dielectric Breakdown

“…By averaging the band offset over all V O cases, we found that Φ̅ B e = 3.10 eV and E̅ g = 8.61 eV for the Al/c-SiO 2 system and Φ̅ B e = 3.01 eV and E̅ g = 8.47 eV for the Al/a-SiO 2 system, where the Φ̅ B e is the average electron effective barrier and E̅ g is the average band gap. Those values are comparable to previous simulations and experiments. ,− The electron barrier height Φ B e and hole barrier height Φ B h of Al/c-SiO 2 and Al/a-SiO 2 systems in the presence of oxygen vacancies at multiple sites have been plotted in Figure S6. The oxygen vacancy created at different sites in silica rarely alters the band alignment compared to the band offset at the defect-free Al/silica system.…”

Effects of Processing on Characteristics of 10–15 nm Thermally Grown SiO2 Films

“…This F-N mechanism was also found for 8-10 nm SiO2 films. This value is very close to data (3.0-3.3 eV) reported in the literature (21,22). (20).…”

Modeling and simulation of tunneling through ultra-thin gate dielectrics

“…43 Weinberg 44 determined the critical field of the FN exponent to be 2.385ϫ10 8 V/cm for a ͗100͘, 2 ⍀ cm silicon substrate and deduced m ox ϭ0.5 m 0 using a barrier height of 3.1 eV. This is to be compared with the self-consistent band structure calculation for ␣-quartz by Chelikowsky and Schlüter, 45 13,40,41 used a Franz-type two-band model 42 instead of a parabolic relation in the SiO 2 gap. However, the correction becomes negligible if a two-mass Franz-type expression is used ͑yielding the parabolic relation with the correct hole mass at the valence band edge͒ due to the large hole mass of Ϸ(5Ϫ10) m 0 .…”

“…The small difference between 0.42 m 0 and 0.39 m 0 indicated the minor importance of the true initial states in the electrodes, whereas the discrepancy between the fitted masses arising from the field and temperature dependencies was explained by a temperature-dependent barrier height. However, Av-Ron et al 40 confirmed the temperature insensitivity of the barrier height by internal photoemission measurements in the range 300-675 K. Krieger and Swanson 41 compared results based on the effective potential method ͑applying the Franz-type band model 42 ͒ with and without inclusion of the image-force effect, respectively. Experimental FN data were claimed to fit with equal accuracy using m ox ϭ1.03 m 0 ͑later corrected to 0.5 m 0 Ref.…”