In this letter, high-performance Al2O3/β-Ga2O3 (001) metal-insulator-semiconductor (MIS) capacitor has been demonstrated. The capacitance-voltage (C-V) curves of the Al2O3/β-Ga2O3 (001) MIS capacitor remain stable under different measurement frequencies. The leakage current density is lower than 2.0 × 10 -8 A/cm 2 when the gate voltage is in the range of -5~13 V. The fixed charge and trapped charge densities in Al2O3 film are 4.4 × 10 12 and 6.0 × 10 11 cm -2 , respectively. Average and minimum interface trapped charge density (Dit) for Al2O3/β-Ga2O3 (001) interface has been extracted to be as low as 3.3 × 10 11 and 2.3 × 10 11 cm -2 eV -1 via the Terman method, respectively. The low Dit is probably attributed to the modification of vacancy defects and the introduction of hydroxyl groups at the Al2O3/β-Ga2O3 (001) interface after piranha solution pretreatment for β-Ga2O3.
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