Two-dimensional (2D) materials have emerged as promising candidates for various optoelectronic applications based on their diverse electronic properties, ranging from insulating to superconducting. However, cooperative phenomena such as ferroelectricity in the 2D limit have not been well explored. Here, we report room-temperature ferroelectricity in 2D CuInP2S6 (CIPS) with a transition temperature of ∼320 K. Switchable polarization is observed in thin CIPS of ∼4 nm. To demonstrate the potential of this 2D ferroelectric material, we prepare a van der Waals (vdW) ferroelectric diode formed by CIPS/Si heterostructure, which shows good memory behaviour with on/off ratio of ∼100. The addition of ferroelectricity to the 2D family opens up possibilities for numerous novel applications, including sensors, actuators, non-volatile memory devices, and various vdW heterostructures based on 2D ferroelectricity.

No abstract

The effect of surface energies, strains, and stresses on the size-dependent elastic state of embedded inhomogeneities are investigated. At nanolength scales, due to the increasing surface-to-volume ratio, surface effects become important and induce a size dependency in the otherwise size-independent classical elasticity solutions. In this letter, closed-form expressions are derived for the elastic state of eigenstrained spherical inhomogeneities with surface effects using a variational formulation. Our results indicate that surface elasticity can significantly alter the fundamental nature of stress state at nanometer length scales. Additional applications of our work on nanostructures such as quantum dots, composites, etc. are implied.

The complete Ref [1] is also included in the discussion of this erratum. The central conclusions of our work (e.g. enhanced size-dependent piezoelectricity in nanostructures due to flexoelectricity) remain the same. In fact, corrected theoretical results in the case of BaTiO 3 in piezoelectric phase compare better with atomistics than the original publication [1]. We provide here the corrected equations and for completeness, the revised figures as well.

The classical formulation of Eshelby (Proc. Royal Society, A241, p. 376, 1957) for embedded inclusions is revisited and modified by incorporating the previously excluded surface/interface stresses, tension and energies. The latter effects come into prominence at inclusion sizes in the nanometer range. Unlike the classical result, our modified formulation renders the elastic state of an embedded inclusion size-dependent making possible the extension of Eshelby’s original formalism to nano-inclusions. We present closed-form expressions of the modified Eshelby’s tensor for spherical and cylindrical inclusions. Eshelby’s original conjecture that only inclusions of the ellipsoid family admit uniform elastic state under uniform stress-free transformation strains must be modified in the context of coupled surface/interface-bulk elasticity. We reach an interesting conclusion in that only inclusions with a constant curvature admit a uniform elastic state, thus restricting this remarkable property only to spherical and cylindrical inclusions. As an immediate consequence of the derivation of modified size-dependent Eshelby tensor for nano-inclusions, we also formulate the overall size-dependent bulk modulus of a composite containing such inclusions. Further applications are illustrated for size-dependent stress concentrations on voids and opto-electronic properties of embedded quantum dots.

Upon application of a uniform strain, internal sub-lattice shifts within the unit cell of a non-centrosymmetric dielectric crystal result in the appearance of a net dipole moment: a phenomenon well known as piezoelectricity. A macroscopic strain gradient on the other hand can induce polarization in dielectrics of any crystal structure, even those which possess a centrosymmetric lattice. This phenomenon, called flexoelectricity, has both bulk and surface contributions: the strength of the bulk contribution can be characterized by means of a material property tensor called the bulk flexoelectric tensor. Several recent studies suggest that strain-gradient induced polarization may be responsible for a variety of interesting and anomalous electromechanical phenomena in materials including electromechanical coupling effects in nonuniformly strained nanostructures, "dead layer" effects in nanocapacitor systems, and "giant" piezoelectricity in perovskite nanostructures among others. In this work, adopting a lattice dynamics based microscopic approach we provide estimates of the flexoelectric tensor for certain cubic ionic crystals, perovskite dielectrics, III-V and II-VI semiconductors. We compare our estimates with experimental/theoretical values wherever available, address the discrepancy that exists between different experimental estimates and also re-visit the validity of an existing empirical scaling relationship for the magnitude of flexoelectric coefficients in terms of material parameters.

No abstract

Piezoelectricity is a unique property of materials that permits the conversion of mechanical stimuli into electrical and vice versa. On the basis of crystal symmetry considerations, pristine carbon nitride (C 3 N 4 ) in its various forms is non-piezoelectric. Here we find clear evidence via piezoresponse force microscopy and quantum mechanical calculations that both atomically thin and layered graphitic carbon nitride, or graphene nitride, nanosheets exhibit anomalous piezoelectricity. Insights from ab inito calculations indicate that the emergence of piezoelectricity in this material is due to the fact that a stable phase of graphene nitride nanosheet is riddled with regularly spaced triangular holes. These non-centrosymmetric pores, and the universal presence of flexoelectricity in all dielectrics, lead to the manifestation of the apparent and experimentally verified piezoelectric response. Quantitatively, an e 11 piezoelectric coefficient of 0.758 C m À 2 is predicted for C 3 N 4 superlattice, significantly larger than that of the commonly compared a-quartz.