this paper presents 2D numerical simulation results allowing to define the sensitive volume and triggering criteria of SEB for VDMOS of classic planar-type technology. The results analysis permits besides to better understand the SEB mechanism.
This paper presents a validation of the methodology based upon backside laser irradiations to characterize the sensitivity of power devices towards SingleEvent Burnout. This is done thanks to high-energy heavy ion testing and device simulations.Index Terms -commercial power MOSFETs, SED, laser tests, heavy ion tests, software sim ulations.
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