SEB characterisation of commercial power MOSFETs with backside laser and heavy ions of different ranges

Abstract

This paper presents a validation of the methodology based upon backside laser irradiations to characterize the sensitivity of power devices towards SingleEvent Burnout. This is done thanks to high-energy heavy ion testing and device simulations.Index Terms -commercial power MOSFETs, SED, laser tests, heavy ion tests, software sim ulations.

Backside Laser Testing of Single-Event Effects in GaN-on-Si Power HEMTs

“…This is commonly done using accelerated particle beams, such as heavy ions [4]- [6]. Pulsedlaser testing can also be used on Si technologies to extract the safe operating area (SOA) [7], [8] or the sensitive regions and volumes of power devices using single-photon absorption (SPA) or two-photon absorption (2PA) [9], [10]. 2PA has also been used on SiC devices [11], [12], another wide bandgap technology.…”